NDS9933A Fairchild Semiconductor, NDS9933A Datasheet - Page 4

• Manufacturer Part Number: NDS9933A
• Description: MOSFET P-CH DUAL 20V 2.8A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9933A

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 140 mOhm @ 2.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 8.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 405pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
5
4
3
2
1
0
0.05
0.01
0.5
0.1
0
20
10
Figure 9. Maximum Safe Operating Area.
0.005
0.002
0.001
5
2
1
Figure 7. Gate-Charge Characteristics.
0.1
0.05
0.02
0.01
0.5
0.2
0.1
0.0001
I = -2.8A
1
D
SINGLE PULSE
R
0.2
V
T
JA
A
GS
A
=135°C/W
= 25°C
= -4.5V
2
- V
D = 0.5
0.5
DS
Q , GATE CHARGE (nC)
0.2
, DRAIN-SOURCE VOLTAGE (V)
g
0.1
0.05
0.001
0.02
1
0.01
Single Pulse
4
V
2
DS
= -5V
Figure 11. Transient Thermal Response Curve.
-15V
5
(continued)
0.01
6
10
Transient themal response will change depending on the circuit board design.
Thermal characterization performed using the conditions described in Note 1.
20
40
8
0.1
t , TIME (sec)
1
30
25
20
15
10
1000
5
0
0.01
600
400
200
100
50
20
0.1
Figure 8. Capacitance Characteristics.
Figure 10. Single Pulse Maximum
f = 1 MHz
V
1
GS
0.2
= 0 V
0.1
-V
Power Dissipation.
DS
SINGLE PULSE TIME (SEC)
, DRAIN TO SOURCE VOLTAGE (V)
0.5
P(pk)
0.5
T - T
10
R
Duty Cycle, D = t /t
J
1
R
JA
t
1
A
JA
(t) = r(t) * R
t
= P * R
2
= 135°C/W
2
10
JA
1
R
SINGLE PULSE
(t)
JA
2
JA
100
T = 25°C
5
A
=135 °C/W
50 100
10
300
C iss
C oss
C rss
NDS9933A Rev. A
300
20