NDS9933A Fairchild Semiconductor, NDS9933A Datasheet - Page 2

• Manufacturer Part Number: NDS9933A
• Description: MOSFET P-CH DUAL 20V 2.8A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9933A

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 140 mOhm @ 2.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 8.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 405pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
V
Symbol
Notes:
1: R
2: Pulse Test: Pulse Width
BV
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
FS
V
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
GS(th)
DSS
T
T
Scale 1 : 1 on letter size paper
DSS
the drain pins. R
J
J
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
JC
is guaranteed by design while R
300 s, Duty Cycle
Parameter
(Note 2)
a. 78
pad of 2oz copper.
O
C/W on a 0.5 in
(Note 2)
2.0%
2
JA
T
A
is determined by the user's board design.
= 25°C unless otherwise noted
V
I
V
V
V
V
I
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
D
D
GS
DS
GS
GS
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= -250 A, Referenced to 25 C
= -250 A, Referenced to 25 C
= -16 V, V
= V
= -5 V, I
= -10 V, V
= -5 V, I
= 0 V, I
= 8 V, V
= -8 V, V
= -4.5 V, I
= -4.5 V, I
= -2.7 V, I
= -2.5 V, I
= -4.5 V, V
= -5 V, I
= -4.5 V, R
= -4.5 V,
= 0 V, I
Test Conditions
GS
, I
D
S
D
D
D
D
DS
= -250 A
DS
= -1.3 A
= -250 A
= -2.8 A
= -1 A,
= -2.8 A,
D
D
D
D
GS
GS
DS
= 0 V
GEN
= 0 V
= -2.8 A
= -2.8A,T
= -1.5 A
= -1.5 A
b. 125
= 0 V
= 0 V,
= -5 V
pad of 2oz copper.
= 6
O
C/W on a 0.02 in
(Note 2)
J
=125 C
2
Min Typ Max Units
-0.4
-20
-10
0.10
0.15
0.13
0.14
-0.65
-0.78
405
170
-25
6.5
6.5
0.8
1.3
45
20
31
21
4
5
0
5
0
6
0.140
0.240
0.190
0.200
-100
c. 135
-1.3
-1.2
100
8.5
13
35
50
35
-1
-1
pad of 2oz copper.
O
C/W on a 0.003 in
mV/ C
mV/ C
NDS9933A Rev. A
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
V
A
A
2