FDW2504P Fairchild Semiconductor, FDW2504P Datasheet - Page 4

• Manufacturer Part Number: FDW2504P
• Description: MOSFET P-CH DUAL 20V 3.8A 8-TSSO
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDW2504P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 43 mOhm @ 3.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1030pF @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
5
4
3
2
1
0
0.01
100
0.1
Figure 9. Maximum Safe Operating Area.
10
0
1
Figure 7. Gate Charge Characteristics.
0.1
R
0.001
I
D
DS(ON)
SINGLE PULSE
0.01
R
= -3.8A
0.1
V
JA
0.0001
T
1
GS
A
= 208
LIMIT
= 25
= -4.5V
o
o
C
3
C/W
V
DS
D = 0.5
, DRAIN-SOURCE VOLTAGE (V)
Q
0.2
0.1
g
1
0.05
, GATE CHARGE (nC)
0.02
0.01
0.001
DC
10s
6
SINGLE PULSE
1s
Figure 11. Transient Thermal Response Curve.
100ms
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
V
10ms
DS
= -5V
10
1ms
0.01
100 s
9
-15V
-10V
100
12
0.1
t
1
, TIME (sec)
1800
1500
1200
50
40
30
20
10
900
600
300
0
0.001
0
Figure 8. Capacitance Characteristics.
0
1
Figure 10. Single Pulse Maximum
0.01
C
ISS
-V
Power Dissipation.
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
t
C
1
, TIME (sec)
OSS
10
P(pk)
C
Duty Cycle, D = t
RSS
T
R
1
R
J
JA
- T
100
JA
(t) = r(t) + R
A
= 208 °C/W
t
1
= P * R
t
2
SINGLE PULSE
R
15
JA
T
10
FDW2504P Rev. E1 (W)
A
= 208°C/W
= 25°C
JA
V
f = 1MHz
1
GS
JA
(t)
/ t
2
= 0 V
1000
100
20