FDW2504P Fairchild Semiconductor, FDW2504P Datasheet

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FDW2504P

Manufacturer Part Number
FDW2504P
Description
MOSFET P-CH DUAL 20V 3.8A 8-TSSO
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDW2504P

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
43 mOhm @ 3.8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.8A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 4.5V
Input Capacitance (ciss) @ Vds
1030pF @ 10V
Power - Max
600mW
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDW2504P
Manufacturer:
FAIRCHILD
Quantity:
138
FDW2504P
Dual P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
2008 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
Package Marking and Ordering Information
D
Load switch
Motor drive
DC/DC conversion
Power management
J
DSS
GSS
D
, T
JA
Device Marking
STG
2504P
TSSOP-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
– Continuous
– Pulsed
FDW2504P
Device
Parameter
Pin 1
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1b)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
–3.8 A, –20 V, R
Extended V
Low gate charge
High performance trench technology for extremely
Low profile TSSOP-8 package
low R
DS(ON)
1
2
3
4
GSS
Tape width
range ( 12V) for battery applications
R
12mm
DS(ON)
DS(ON)
Ratings
55 to +150
125
208
1.0
0.6
3.8
12
20
30
= 0.043
= 0.070
@ V
@ V
8
7
6
5
GS
GS
FDW2504P Rev. E1 (W)
July 2008
2500 units
Quantity
= –4.5 V
= –2.5 V
Units
C/W
W
V
V
A
C

Related parts for FDW2504P

FDW2504P Summary of contents

Page 1

... C unless otherwise noted A Ratings (Note 1) (Note 1a) (Note 1b) – +150 (Note 1a) (Note 1b) Reel Size Tape width 13’’ 12mm July 2008 = 0.043 @ V = –4 0.070 @ V = –2 Units V – – 3.8 – 30 1.0 W 0.6 C 125 C/W 208 Quantity 2500 units FDW2504P Rev. E1 (W) ...

Page 2

... –0.83 A (Note determined by the user's board design. CA Min Typ Max Units –20 V –16 mV/ C –1 A –100 nA 100 nA –0.6 –1.0 –1 mV/ C 0.036 0.043 0.056 0.070 0.049 0.069 –15 A 13.2 S 1030 pF 280 pF 120 9 2.2 nC 2.4 nC –0.83 A –0.7 –1.2 V FDW2504P Rev. E1 (W) ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -2.5V -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( -1. 125 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDW2504P Rev. E1 (W) 5 1.4 ...

Page 4

... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 208°C 25°C A 0.01 0 TIME (sec) 1 Power Dissipation. R ( 208 °C/W JA P(pk ( Duty Cycle 100 1000 FDW2504P Rev. E1 (W) 20 100 ...

Page 5

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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