FDM2509NZ Fairchild Semiconductor, FDM2509NZ Datasheet - Page 2

• Manufacturer Part Number: FDM2509NZ
• Description: MOSFET N-CH DUAL 20V 8.7A 2X5MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDM2509NZ

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 8.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 8.7A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1200pF @ 10V
• Power - Max: 2.2W
• Mounting Type: Surface Mount
• Package / Case: 6-MLP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1. R
Notes:
R
t
Q
Electrical Characteristics
Symbol
Off Characteristics
BV
∆BV
I
I
On Characteristics
V
∆V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
the drain pins. R
DSS
GSS
d(on)
r
d(off)
f
S
rr
FS
GS(th)
SD
DS(on)
iss
oss
rss
G
θJA
∆T
∆T
g
gs
gd
rr
GS(th)
DSS
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
J
J
θJC
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage,
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
is guaranteed by design while R
Parameter
(Note 2)
a)
Scale 1 : 1 on letter size
paper
(Note 2)
55°C/W when
mounted on a 1in
of 2 oz copper
θCA
is determined by the user's board design.
V
I
V
V
V
I
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
I
dI
D
D
F
T
GS
DS
GS
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
GS
F
= 8.7 A,
2
= 250 µA, Referenced to 25°C
= 250 µA, Referenced to 25 C
A
/dt = 100 A/µs
pad
= 25°C unless otherwise noted
= 0 V,
= 16 V,
= ±12 V,
= V
= 4.5 V,
= 4.0 V,
= 3.1 V,
= 2.5 V,
= 4.5 V, I
= 5 V,
= 10 V,
= 10 V,
= 4.5 V,
= 10 V,
= 4.5 V
= 0 V,
= 50mV,
Test Conditions
GS
,
I
D
S
= 8.7 A, T
= 1.8 A
I
I
I
I
I
I
I
V
f = 1.0 MHz
I
R
I
V
V
D
D
D
D
D
D
D
D
D
GS
DS
GEN
GS
= 250 µA
= 250 µA
= 8.7 A
= 8.5 A
= 8.1 A
= 7.6 A
= 8.7 A
= 1 A,
= 8.7 A,
= 0 V
= 0 V
= 0 V,
= 6 Ω
J
= 125°C
(Note 2)
b)
2. Pulse Test: Pulse Width < 300µs,
3. The diode connected between the
Min
0.6
20
145°C/W when mounted on a
minimum pad of 2 oz copper
Duty Cycle < 2.0%
gate and the source serves only
as protection against ESD. No
gate overvoltage rating is
implied.
Typ Max
1200
13.5
15.5
18.4
320
185
0.9
0.7
6.4
12
–3
13
18
36
11
15
27
12
12
20
2
2
4
±10
1.5
1.8
1.2
18
19
21
24
25
20
27
43
22
17
1
FDM2509NZ Rev C2
Units
mV/°C
mV/°C
mΩ
µA
µA
nC
nC
nC
nS
nC
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S
A
V