FDM2509NZ Fairchild Semiconductor, FDM2509NZ Datasheet

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FDM2509NZ

Manufacturer Part Number
FDM2509NZ
Description
MOSFET N-CH DUAL 20V 8.7A 2X5MLP
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDM2509NZ

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 8.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
8.7A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Input Capacitance (ciss) @ Vds
1200pF @ 10V
Power - Max
2.2W
Mounting Type
Surface Mount
Package / Case
6-MLP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDM2509NZ*
Manufacturer:
ST
Quantity:
50
FDM2509NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This dual N-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the R
special MicroFET lead frame with all the drains on one
side of the package.
Applications
• Li-Ion Battery Pack
2006 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
θJA
θJC
, T
Device Marking
STG
2509Z
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (Steady State)
Operating and Storage Junction Temperature
Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case (Drain)
S2 S2 G2
S1 S1 G1
– Continuous
– Pulsed
FDM2509NZ
Parameter
DS(ON)
PIN 1
Device
@ V
MLP 2x5
GS
= 2.5v on
T
A
=25
Reel Size
o
C unless otherwise noted
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
Features
• 8.7 A, 20 V
• ESD protection diode (note 3)
• Low Profile – 0.8mm maximum – in the new package
MicroFET 2x5 mm
G2
S2
S2
4
6
5
Tape width
–55 to +150
Bottom Drain Contact
12mm
Ratings
Bottom Drain Contact
R
R
Q2
DS(ON)
DS(ON)
±12
8.7
2.2
0.8
20
30
55
2
= 18 mΩ @ V
= 24 mΩ @ V
Q1
February 2006
3
1
2
GS
GS
G1
S1
S1
= 2.5 V
= 4.5 V
3000 units
FDM2509NZ Rev C2
Quantity
Units
°C/W
°C
W
V
V
A

Related parts for FDM2509NZ

FDM2509NZ Summary of contents

Page 1

... Reel Size 7’’ February 2006  mΩ 4.5 V DS(ON mΩ 2.5 V DS(ON) GS Bottom Drain Contact Bottom Drain Contact Ratings Units 20 V ± 2.2 W 0.8 –55 to +150 °C °C Tape width Quantity 12mm 3000 units FDM2509NZ Rev C2 ...

Page 2

... A 0 145°C/W when mounted on a minimum pad copper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. The diode connected between the gate and the source serves only as protection against ESD. No gate overvoltage rating is implied. FDM2509NZ Rev C2 ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 2.0V 2.5V 3.0V 3.5V 4. DRAIN CURRENT ( 4. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDM2509NZ Rev 1.2 ...

Page 4

... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 145°C/W θ 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( θJA θJA R =145 °C/W θJA P(pk ( θJA Duty Cycle 100 1000 FDM2509NZ Rev C2 20 ...

Page 5

... Dimensional Outline and Pad Layout FDM2509NZ Rev C2 ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...

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