This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... Reel Size 7’’ February 2006 mΩ 4.5 V DS(ON mΩ 2.5 V DS(ON) GS Bottom Drain Contact Bottom Drain Contact Ratings Units 20 V ± 2.2 W 0.8 –55 to +150 °C °C Tape width Quantity 12mm 3000 units FDM2509NZ Rev C2 ...
... A 0 145°C/W when mounted on a minimum pad copper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. The diode connected between the gate and the source serves only as protection against ESD. No gate overvoltage rating is implied. FDM2509NZ Rev C2 ...
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 2.0V 2.5V 3.0V 3.5V 4. DRAIN CURRENT ( 4. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDM2509NZ Rev 1.2 ...
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 145°C/W θ 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( θJA θJA R =145 °C/W θJA P(pk ( θJA Duty Cycle 100 1000 FDM2509NZ Rev C2 20 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...