IRF7350TRPBF International Rectifier, IRF7350TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7350TRPBF
• Description: MOSFET N/P-CH 100V 2.1A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7350TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: N and P-Channel
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 2.1A, 1.5A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 210 mOhm @ 2.1A, 10V
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 2.1 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 19 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7350
10000
4
1000
10.00
100
10
1.00
0.10
1
Fig 7. Typical Source-Drain Diode
0.0
Fig 5. Typical Capacitance Vs.
V DS , Drain-to-Source Voltage (V)
Drain-to-Source Voltage
T J = 150°C
V SD , Source-toDrain Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
0.5
10
Coss
Crss
Ciss
f = 1 MHZ
T J = 25°C
1.0
V GS = 0V
SHORTED
N-CHANNEL
100
1.5
100
0.1
10
Fig 8. Maximum Safe Operating Area
1
12
10
7
5
2
0
1
0

I
Tc = 25°C
Tj = 150°C
Single Pulse
D
Fig 6. Typical Gate Charge Vs.
=
2.1A
V DS , Drain-toSource Voltage (V)
Gate-to-Source Voltage
Q , Total Gate Charge (nC)
4
G
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
8

V
V
V
DS
DS
DS
= 80V
= 50V
= 20V
12
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100
100µsec
1msec
10msec
16
1000
20