IRF7350TRPBF International Rectifier, IRF7350TRPBF Datasheet - Page 10
![no-image](/images/manufacturer_photos/0/3/338/international_rectifier_sml.jpg)
IRF7350TRPBF
Manufacturer Part Number
IRF7350TRPBF
Description
MOSFET N/P-CH 100V 2.1A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7350TRPBF.pdf
(16 pages)
Specifications of IRF7350TRPBF
Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
2W
Fet Type
N and P-Channel
Gate Charge (qg) @ Vgs
28nC @ 10V
Vgs(th) (max) @ Id
4V @ 250µA
Current - Continuous Drain (id) @ 25° C
2.1A, 1.5A
Drain To Source Voltage (vdss)
100V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
210 mOhm @ 2.1A, 10V
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
2.1 A
Power Dissipation
2 W
Mounting Style
SMD/SMT
Gate Charge Qg
19 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7350TRPBF
Manufacturer:
NS/TI
Quantity:
3
IRF7350
10
10000
1000
10.00
100
10
1.00
0.10
Fig 27. Typical Source-Drain Diode
1
Fig 25. Typical Capacitance Vs.
0.2
Drain-to-Source Voltage
-V DS , Drain-to-Source Voltage (V)
-V SD , Source-toDrain Voltage (V)
T J = 150°C
0.4
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
0.6
10
Crss
Coss
Ciss
f = 1 MHZ
0.8
T J = 25°C
V GS = 0V
1.0
SHORTED
P-CHANNEL
100
1.2
Fig 28. Maximum Safe Operating Area
100
0.1
10
12
10
7
5
2
0
1
0
I
1
D
Fig 26. Typical Gate Charge Vs.
Tc = 25°C
Tj = 150°C
Single Pulse
=
-1.5A
-V DS , Drain-toSource Voltage (V)
Gate-to-Source Voltage
Q , Total Gate Charge (nC)
5
G
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
V
V
V
10
DS
DS
DS
= 80V
= 50V
= 20V
15
www.irf.com
100
100µsec
1msec
10msec
20
1000
25