IRF7350TRPBF International Rectifier, IRF7350TRPBF Datasheet - Page 5
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IRF7350TRPBF
Manufacturer Part Number
IRF7350TRPBF
Description
MOSFET N/P-CH 100V 2.1A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7350TRPBF.pdf
(16 pages)
Specifications of IRF7350TRPBF
Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
2W
Fet Type
N and P-Channel
Gate Charge (qg) @ Vgs
28nC @ 10V
Vgs(th) (max) @ Id
4V @ 250µA
Current - Continuous Drain (id) @ 25° C
2.1A, 1.5A
Drain To Source Voltage (vdss)
100V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
210 mOhm @ 2.1A, 10V
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
2.1 A
Power Dissipation
2 W
Mounting Style
SMD/SMT
Gate Charge Qg
19 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7350TRPBF
Manufacturer:
NS/TI
Quantity:
3
www.irf.com
100
2.5
2.0
1.5
1.0
0.5
0.0
0.1
10
0.00001
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
0.20
0.10
0.05
0.02
0.01
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
50
T , Case Temperature
C
Case Temperature
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
( C)
°
125
t , Rectangular Pulse Duration (sec)
1
150
N-CHANNEL
0.01
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
0.1
DS
GS
t
R
d(on)
Pulse Width
Duty Factor
1. Duty factor D =
2. Peak T
G
Notes:
V
V
GS
GS
t
r
V
1
J
DS
= P
µs
DM
x Z
t / t
1
thJA
D.U.T.
IRF7350
P
2
t
DM
d(off)
+ T
R
10
D
A
t
1
t
f
t
2
+
-
V
5
DD
100