irf7350 International Rectifier Corp., irf7350 Datasheet

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irf7350

Manufacturer Part Number
irf7350
Description
Hexfet Power Mosfet
Manufacturer
International Rectifier Corp.
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7350
Quantity:
2 470
Part Number:
IRF7350
Manufacturer:
IR
Quantity:
20 000
Part Number:
irf7350PBF
Manufacturer:
IR
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irf7350TRPBF
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Quantity:
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Absolute Maximum Ratings
Thermal Resistance
Description
These dual N and P channel HEXFET
Rectifier utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
well known for, provides the designer with an extremely efficient and reliable
device for use in DC motor drives and load management applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety
of power applications. With these improvements, multiple devices can be
used in an application with dramatically reduced board space. The package
is designed for vapor phase, infra red, or wave soldering techniques.
T
V
I
I
I
P
E
V
dv/dt
Symbol
R
R
www.irf.com
l
l
l
l
D
D
DM
J,
DS
D
AS
GS
@ T
@ T
JL
JA
T
@T
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape and Reel
STG
A
A
A
= 25°C
= 70°C
= 25°C
Drain-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
Parameter
Parameter
ƒ
®
power MOSFETs from International
GS
GS
@ 10V
@ 10V
®
power MOSFETs are
G 2
G 1
S 2
S 1
N - C H A N N EL M O S FE T
P -C H A N N E L M O S F E T
1
2
3
4
T op V iew
N-Channel
± 20
100
2.1
1.7
8.4
4.0
35
Typ.
–––
–––
HEXFET
-55 to + 150
8
6
5
7
D 1
D 1
D 2
Max.
0.016
D 2
2.0
R
V
®
DS(on)
DSS
Power MOSFET
P-Channel
Max.
62.5
20
-100
± 20
-1.5
-1.2
-6.0
4.3
51
0.21
N-Ch
100V
IRF7350
SO-8
PD - 94226B
-100V
P-Ch
0.48
Units
°C/W
Units
W/°C
V/ns
°C
mJ
W
A
V
1
08/09/01

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irf7350 Summary of contents

Page 1

... iew ® power MOSFETs from International ® power MOSFETs are N-Channel 100 @ 10V 2 10V 1.7 GS 8.4 „ 35 ± 20 ‚ 4.0 Typ. ––– ƒ ––– 94226B IRF7350 ® HEXFET Power MOSFET N-Ch P- 100V -100V DSS 0.21 0.48 DS(on) SO-8 Max. ...

Page 2

... IRF7350 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... Fig 3. Typical Transfer Characteristics www.irf.com N-CHANNEL 100 TOP 10 BOTTOM 4.0V 1 0.1 4.0V 0.01 10 100 0.1 Fig 2. Typical Output Characteristics 2 2.0 1.5 1.0 0.5 0.0 7.5 9.0 -60 -40 Fig 4. Normalized On-Resistance IRF7350 VGS 15V 10V 7.0V 6.0V 5.5V 5.0V 4.5V 4.0V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage (V) 2. 10V GS - 100 120 140 ° ...

Page 4

... IRF7350 10000 0V MHZ C iss = rss = oss = 1000 Ciss Coss 100 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10. 150°C 1.00 0.10 0.0 0 Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com N-CHANNEL R Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms  0.01 0 Rectangular Pulse Duration (sec) 1 IRF7350 D.U. µ d(off ...

Page 6

... IRF7350 0.40 0. 2.1A 0.20 0.10 0.00 4.5 6.0 7.5 9.0 10.5 V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 4.0 3 250µA 3.0 2.5 2.0 -75 -50 - Temperature ( °C ) Fig 14. Typical Threshold Voltage Vs. Junction Temperature 6 N-CHANNEL 0.18 0.17 0.16 0.15 12.0 13.5 15.0 0 Fig 13. Typical On-Resistance Vs. Drain 100 125 150 1.00 Fig 15. Typical Power Vs. Time ...

Page 7

... Fig 16c. Unclamped Inductive Test Circuit 125 150 ° Fig 16d. Unclamped Inductive Waveforms Fig 18. Basic Gate Charge Waveform IRF7350 ...

Page 8

... IRF7350 10 Duty Cycle = Single Pulse 1 0.01 0.05 0.1 0.10 0.01 0.001 1.0E-06 1.0E-05 1.0E-04 Fig 19. Typical Avalanche Current Vs.Pulsewidth 40 TOP Single Pulse BOTTOM 10% Duty Cycle 4. 100 Starting Junction Temperature (°C) Fig 20. Maximum Avalanche Energy Vs. Temperature 8 N-CHANNEL 1.0E-03 1.0E-02 1.0E-01 1.0E+00 tav (sec) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www ...

Page 9

... Fig 23. Typical Transfer Characteristics www.irf.com P-CHANNEL 100 TOP 10 BOTTOM -4.0V 1 0.1 0.01 10 100 0.1 Fig 22. Typical Output Characteristics  2 150°C 2.0 1.5 1.0 0.5 0.0 8.0 10.0 -60 Fig 24. Normalized On-Resistance IRF7350 VGS -15V -10V -7.0V -6.0V -5.5V -5.0V -4.5V -4.0V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage (V) -1. -40 - ...

Page 10

... IRF7350 10000 0V MHZ C iss = rss = oss = 1000 Ciss Coss 100 Crss Drain-to-Source Voltage (V) Fig 25. Typical Capacitance Vs. Drain-to-Source Voltage 10. 150°C 1.00 0.10 0.2 0.4 0.6 0 Source-toDrain Voltage (V) Fig 27. Typical Source-Drain Diode Forward Voltage ...

Page 11

... Fig 30. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com P-CHANNEL Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 Fig 10b. Switching Time Waveforms 0.001 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7350 D.U. Pulse Width µs Duty Factor ...

Page 12

... IRF7350 0.80 0.70 0. -1.5A 0.50 0.40 0.30 5.0 7.0 9.0 11.0 -V GS, Gate -to -Source Voltage (V) Fig 31. Typical On-Resistance Vs. Gate Voltage 4.0 3 -250µA 3.0 2.5 2.0 -75 -50 - Temperature ( °C ) Fig 33. Typical Threshold Voltage Vs. Junction Temperature 12 P-CHANNEL 0.500 0.475 0.450 0.425 0.400 13.0 15.0 0 Fig 32. Typical On-Resistance Vs. Drain 1.00 75 100 ...

Page 13

... Fig 35c. Unclamped Inductive Test Circuit 125 150 ° Fig 35d. Unclamped Inductive Waveforms Fig 37. Basic Gate Charge Waveform IRF7350 ...

Page 14

... IRF7350 10 Duty Cycle = Single Pulse 1 0.01 0.05 0.1 0.10 0.01 0.001 1.0E-06 1.0E-05 1.0E-04 Fig 38. Typical Avalanche Current Vs.Pulsewidth 60 TOP Single Pulse BOTTOM 10% Duty Cycle -3. 100 Starting Junction Temperature (°C) Fig 39. Maximum Avalanche Energy Vs. Temperature 14 P-CHANNEL Allowed avalanche Current vs avalanche assuming avalanche losses 1 ...

Page 15

... RECTIFIER LOGO www.irf.com B H 0.25 [.010 0.10 [.004 6.46 [.255] 3X 1.27 [.050] DATE CODE (YWW LAS T DIGIT OF THE YEAR WW = WEEK YWW XXXX LOT CODE F7101 PART NUMBER IRF7350 INCHES MILLIMET ERS DIM MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c ...

Page 16

... IRF7350 SO-8 Tape and Reel . . ( ...

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