IRF7350TRPBF International Rectifier, IRF7350TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7350TRPBF
• Description: MOSFET N/P-CH 100V 2.1A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7350TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: N and P-Channel
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 2.1A, 1.5A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 210 mOhm @ 2.1A, 10V
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 2.1 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 19 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Source-Drain Ratings and Characteristics
IRF7350
Electrical Characteristics @ T

‚
ƒ
Notes:
I
I
V
t
Q
V
R
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
I
S
SM
rr
DSS
d(on)
r
d(off)
f
GSS
SD
V
fs
rr
2
(BR)DSS
GS(th)
DS(ON)
iss
oss
rss
g
gs
gd
Repetitive rating; pulse width limited by
Pulse width
(BR)DSS
max. junction temperature.
Surface mounted on 1 in square Cu board
/ T
J
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
400µs; duty cycle
Parameter
Parameter
2%.
J
= 25°C (unless otherwise specified)

„
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
P channel: Starting T
N channel: Starting T
N-Ch 100
P-Ch -100
N-Ch —
P-Ch —
N-Ch
P-Ch
N-Ch 2.0
P-Ch -2.0
N-Ch 2.4
P-Ch 1.1
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-P
Min. Typ. Max. Units
Min. Typ. Max. Units
—
––
—
205 310
240 360
-0.11
0.12
380
360
100
110
—
—
—
—
—
—
72
77
3.0
3.4
8.8
6.7
—
—
—
—
—
—
—
—
—
—
—
—
— ±100
19
21
10
25
11
13
35
30
20
40
54
65
-1.4
-6.0
-1.6
0.48
110
120
-250
1.8
8.4
1.3
0.21
-4.0
250
4.0
-25
4.5
5.1
—
—
—
—
—
—
25
28
31
13
16
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V/°C
nC
J
ns
nC
J
µA
pF
A
V
ns
V
V
S
= 25°C, L = 11mH, R
= 25°C, L = 4.0mH, R
T
T
N-Channel
T
P-Channel
T
N-Channel
V
V
V
N-Channel
V
R
P-Channel
V
R
P-Channel
V
V
V
Reference to 25°C, I
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
N-Channel
I
P-Channel
I
D
D
J
J
J
J
DD
DD
GS
GS
GS
GS
D
D
GS
GS
DS
DS
DS
DS
DS
DS
DS
DS
GS
= 25°C, I
= 25°C, I
= 25°C, I
= 25°C, I
= 2.1A, V
= -1.5A, V
= 50
= 50
= 0V, V
= 10V, I
= -10V, I
= V
= V
= 50V, I
= -50V, I
= 100V, V
= -100V, V
= 80 V, V
= -80V, V
= 50V, I
= -50V, I
= 0V, V
= 0V, I
= 0V, I
= ± 20V
GS
GS
, I
, I
V
D
D
V
F
F
S
S
DS
DS
DS
GS
D
D
D
D
D
DS
GS
= 250µA
= 1.8A, di/dt = 100A/µs
= -1.4A, di/dt = -100A/µs
= -250µA
D
D
D
= 1.8A, V
= -1.4A, V
GS
GS
= 250µA
= -250µA
= 1.0A, R
Conditions
= 2.1A ‚
= 2.1A
GS
= 80V, V
= -1.0A, R
= 25V, ƒ = 1.0MHz
= -25V, ƒ = 1.0MHz
= -1.5A
= -1.5A
= -10V
GS
= -80V, V
= 10V
= 0V, T
= 0V, T
= 0V ‚
= 0V ‚
G
G
D
D
Conditions
= 25
= -1mA
= 1mA
= 25
GS
GS
G
GS
www.irf.com
J
J
GS
G
‚
= 70°C
= 22 ,
= 70°C
= 0V ‚
= 10V
= 0V ‚
= 22 ,
= -10V
I
AS
I
AS
= -3.0A
= 4.2A
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