IRF7350TRPBF International Rectifier, IRF7350TRPBF Datasheet - Page 13

• Manufacturer Part Number: IRF7350TRPBF
• Description: MOSFET N/P-CH 100V 2.1A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7350TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2W
• Fet Type: N and P-Channel
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 2.1A, 1.5A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 210 mOhm @ 2.1A, 10V
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 2.1 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 19 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 36. Gate Charge Test Circuit
120
96
72
48
24
0
25
Fig 35a. Maximum Avalanche Energy
Starting T , Junction Temperature
12V
V
GS
Same Type as D.U.T.
50
Current Regulator
.2 F
J
Vs. Drain Current
50K
3mA
Current Sampling Resistors
75
.3 F
I
G
100
D.U.T.

I
TOP
BOTTOM
D
+
-
V
125
DS
( C)
°
I D
-1.3A
-2.4A
-3.0A
150
P-CHANNEL
Fig 35c. Unclamped Inductive Test Circuit
Fig 35d. Unclamped Inductive Waveforms
I
A S
Fig 37. Basic Gate Charge Waveform
V
GS
R G
2 0 V
V
V D S
G
t p
t p
Q
GS
I A S
D .U .T
0 .0 1
L
V
Q
Charge
(B R )D SS
Q
GD
G
IRF7350
1 5 V
D R IV E R
+
-
V D D
13
A