IRF7350TRPBF International Rectifier, IRF7350TRPBF Datasheet - Page 3
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IRF7350TRPBF
Manufacturer Part Number
IRF7350TRPBF
Description
MOSFET N/P-CH 100V 2.1A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7350TRPBF.pdf
(16 pages)
Specifications of IRF7350TRPBF
Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
2W
Fet Type
N and P-Channel
Gate Charge (qg) @ Vgs
28nC @ 10V
Vgs(th) (max) @ Id
4V @ 250µA
Current - Continuous Drain (id) @ 25° C
2.1A, 1.5A
Drain To Source Voltage (vdss)
100V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
210 mOhm @ 2.1A, 10V
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
2.1 A
Power Dissipation
2 W
Mounting Style
SMD/SMT
Gate Charge Qg
19 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7350TRPBF
Manufacturer:
NS/TI
Quantity:
3
www.irf.com
10.00
0.01
1.00
0.10
0.01
100
0.1
10
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
0.1
3.0
TOP
BOTTOM 4.0V
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5
T J = 25°C
1
20µs PULSE WIDTH
Tj = 25°C
6.0
V DS = 15V
20µs PULSE WIDTH
10
4.0V
7.5
N-CHANNEL
100
9.0
0.01
100
0.1
10
1
Fig 4. Normalized On-Resistance
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
0.1
TOP
BOTTOM 4.0V
-60
I
D
=
-40
2.1A
V DS , Drain-to-Source Voltage (V)
VGS
Vs. Temperature
15V
-20
T , Junction Temperature
10V
7.0V
6.0V
5.5V
5.0V
4.5V
J
0
1
20
20µs PULSE WIDTH
Tj = 150°C
40
60
IRF7350
80
10
4.0V
100
( C)
V
°
120
GS
=
140
10V
3
100
160