2N7002PS,115 NXP Semiconductors, 2N7002PS,115 Datasheet - Page 8

• Manufacturer Part Number: 2N7002PS,115
• Description: MOSFET N-CH DUAL 60V SOT-363
• Manufacturer: NXP Semiconductors

Specifications of 2N7002PS,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Mounting Type: Surface Mount
• Power - Max: 300mW
• Fet Type: 2 N-Channel (Dual)
• Current - Continuous Drain (id) @ 25° C: 300mA
• Drain To Source Voltage (vdss): 60V
• Fet Feature: Standard
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 1.6 Ohm @ 10 V
• Gate Charge Qg: 0.6 nC
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.32 A
• Power Dissipation: 320 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Vgs(th) (max) @ Id: -
• Rds On (max) @ Id, Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934064134115

NXP Semiconductors
2N7002PS
Product data sheet
Fig 10. Per transistor: Transfer characteristics: drain
Fig 12. Per transistor: Gate-source threshold voltage
V
GS(th)
(A)
(V)
I
(1) T
(2) T
(1) maximum values
(2) typical values
(3) minimum values
D
1.0
0.8
0.6
0.4
0.2
0.0
3.0
2.0
1.0
0.0
−60
0.0
V
current as a function of gate-source voltage;
typical values
I
as a function of ambient temperature
D
amb
amb
DS
= 0.25 mA; V
> I
= 25 °C
= 150 °C
D
1.0
× R
0
DSon
DS
2.0
= V
(2)
(1)
(2)
(3)
60
GS
(1)
3.0
(1)
120
(2)
4.0
T
All information provided in this document is subject to legal disclaimers.
amb
017aaa021
017aaa023
V
GS
(°C)
(V)
180
5.0
Rev. 1 — 1 July 2010
Fig 11. Per transistor: Normalized drain-source
Fig 13. Per transistor: Input, output and reverse
(pF)
C
(1) C
(2) C
(3) C
a
10
2.4
1.8
1.2
0.6
0.0
10
1
2
10
−60
on-state resistance as a function of ambient
temperature; typical values
f = 1 MHz; V
transfer capacitances as a function of
drain-source voltage; typical values
a
−1
iss
oss
rss
=
60 V, 320 mA N-channel Trench MOSFET
-----------------------------
R
DSon 25°C
R
DSon
0
(
GS
1
= 0 V
(1)
(2)
(3)
)
60
10
2N7002PS
120
V
© NXP B.V. 2010. All rights reserved.
T
DS
amb
017aaa022
017aaa024
(V)
(°C)
180
10
2
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