2N7002PS,115 NXP Semiconductors, 2N7002PS,115 Datasheet - Page 13

• Manufacturer Part Number: 2N7002PS,115
• Description: MOSFET N-CH DUAL 60V SOT-363
• Manufacturer: NXP Semiconductors

Specifications of 2N7002PS,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Mounting Type: Surface Mount
• Power - Max: 300mW
• Fet Type: 2 N-Channel (Dual)
• Current - Continuous Drain (id) @ 25° C: 300mA
• Drain To Source Voltage (vdss): 60V
• Fet Feature: Standard
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 1.6 Ohm @ 10 V
• Gate Charge Qg: 0.6 nC
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.32 A
• Power Dissipation: 320 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Vgs(th) (max) @ Id: -
• Rds On (max) @ Id, Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934064134115

NXP Semiconductors
11. Revision history
Table 8.
2N7002PS
Product data sheet
Document ID
2N7002PS v.1
Revision history
20100701
Release date
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Rev. 1 — 1 July 2010
60 V, 320 mA N-channel Trench MOSFET
Change notice
-
Supersedes
-
2N7002PS
© NXP B.V. 2010. All rights reserved.
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