2N7002PS,115 NXP Semiconductors, 2N7002PS,115 Datasheet - Page 2

• Manufacturer Part Number: 2N7002PS,115
• Description: MOSFET N-CH DUAL 60V SOT-363
• Manufacturer: NXP Semiconductors

Specifications of 2N7002PS,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Mounting Type: Surface Mount
• Power - Max: 300mW
• Fet Type: 2 N-Channel (Dual)
• Current - Continuous Drain (id) @ 25° C: 300mA
• Drain To Source Voltage (vdss): 60V
• Fet Feature: Standard
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 1.6 Ohm @ 10 V
• Gate Charge Qg: 0.6 nC
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.32 A
• Power Dissipation: 320 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Vgs(th) (max) @ Id: -
• Rds On (max) @ Id, Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934064134115

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
2N7002PS
Product data sheet
Table 2.
Table 3.
Table 4.
[1]
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
4
5
6
Type number Package
2N7002PS
Type number
2N7002PS
Symbol
Per transistor
V
V
I
I
D
DM
DS
GS
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Symbol
S1
G1
D2
S2
G2
D1
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
Pinning
Ordering information
Marking codes
Limiting values
Name
SC-88
All information provided in this document is subject to legal disclaimers.
Description
source1
gate1
drain2
source2
gate2
drain1
Rev. 1 — 1 July 2010
Description
plastic surface-mounted package; 6 leads
T
T
V
Conditions
T
single pulse; t
amb
amb
amb
GS
T
T
amb
amb
= 10 V
= 25 °C
= 25 °C
= 25 °C;
= 25 °C
= 100 °C
Marking code
M8*
Simplified outline
60 V, 320 mA N-channel Trench MOSFET
p
≤ 10 μs
1
6
5
2
[1]
[1]
4
3
Min
-
-
-
-
-
Graphic symbol
2N7002PS
© NXP B.V. 2010. All rights reserved.
Max
60
±20
320
240
1.2
D
S
1
1
G
1
Version
SOT363
D
S
Unit
V
V
mA
mA
A
2
2
msd901
G
2 of 16
2