2N7002PS,115 NXP Semiconductors, 2N7002PS,115 Datasheet - Page 10

• Manufacturer Part Number: 2N7002PS,115
• Description: MOSFET N-CH DUAL 60V SOT-363
• Manufacturer: NXP Semiconductors

Specifications of 2N7002PS,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Mounting Type: Surface Mount
• Power - Max: 300mW
• Fet Type: 2 N-Channel (Dual)
• Current - Continuous Drain (id) @ 25° C: 300mA
• Drain To Source Voltage (vdss): 60V
• Fet Feature: Standard
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 1.6 Ohm @ 10 V
• Gate Charge Qg: 0.6 nC
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.32 A
• Power Dissipation: 320 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Vgs(th) (max) @ Id: -
• Rds On (max) @ Id, Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934064134115

NXP Semiconductors
8. Test information
2N7002PS
Product data sheet
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 17. Duty cycle definition
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 July 2010
P
t
1
t
2
duty cycle δ =
60 V, 320 mA N-channel Trench MOSFET
006aaa812
t
t
t
1
2
2N7002PS
© NXP B.V. 2010. All rights reserved.
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