FDS6812A Fairchild Semiconductor, FDS6812A Datasheet
FDS6812A
Manufacturer Part Number
FDS6812A
Description
MOSFET N-CH DUAL 20V 6.7A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6812A.pdf
(5 pages)
Specifications of FDS6812A
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 6.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6.7A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 4.5V
Input Capacitance (ciss) @ Vds
1082pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.022 Ohms
Forward Transconductance Gfs (max / Min)
37 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
6.7 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS6812A
Manufacturer:
FAIRCHILD
Quantity:
2 285
Part Number:
FDS6812A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS6812A-NL
Manufacturer:
FAIRCHILD
Quantity:
50 000
Part Number:
FDS6812A-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDS6812A
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced
using
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
FDS6812A
Fairchild
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Pin 1
D
D2
Semiconductor’s
D
D2
SO-8
D
– Continuous
– Pulsed
D1
FDS6812A
D
Device
D1
Parameter
S2
S
G2
S
advanced
S1
S
G1
T
G
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Features
6.7 A, 20 V.
Low gate charge (12 nC typical)
High performance trench technology for extremely
High power and current handling capability
low R
DS(ON)
5
6
7
8
Tape width
Q1
Q2
–55 to +150
12mm
Ratings
R
R
DS(ON)
DS(ON)
6.7
1.6
0.9
20
35
78
40
2
1
12
= 22 m @ V
= 35 m @ V
November 2001
4
3
2
1
GS
GS
FDS6812A Rev B (W)
2500 units
Quantity
= 4.5 V
= 2.5 V
Units
C/W
C/W
W
V
V
A
C
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Datasheet:
FDS6812A Summary of contents
Page 1
... High power and current handling capability =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Reel Size 13’’ November 2001 4.5 V DS(ON 2.5 V DS(ON Ratings Units 6 1.6 1 0.9 –55 to +150 C 78 C/W 40 C/W Tape width Quantity 12mm 2500 units FDS6812A Rev B (W) ...
Page 2
... 1.3 A (Note determined by the user's board design 125°C/W when mounted pad copper Min Typ Max Units mV 100 nA –100 0.6 0.8 1.5 V –3.2 mV 1082 pF 277 pF 130 1.3 A 0.7 1 135°C/W when mounted on a minimum mounting pad. FDS6812A Rev B (W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 2.0V GS 2.5V 3.0V 3.5V 4.0V 4. DRAIN CURRENT ( 3 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6812A Rev B ( 1.2 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 135 C/W JA P(pk ( Duty Cycle 100 1000 FDS6812A Rev B (W) 20 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...