FDS6812A Fairchild Semiconductor, FDS6812A Datasheet - Page 4
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FDS6812A
Manufacturer Part Number
FDS6812A
Description
MOSFET N-CH DUAL 20V 6.7A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS6812A.pdf
(5 pages)
Specifications of FDS6812A
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 6.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6.7A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 4.5V
Input Capacitance (ciss) @ Vds
1082pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.022 Ohms
Forward Transconductance Gfs (max / Min)
37 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
6.7 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS6812A
Manufacturer:
FAIRCHILD
Quantity:
2 285
Part Number:
FDS6812A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS6812A-NL
Manufacturer:
FAIRCHILD
Quantity:
50 000
Part Number:
FDS6812A-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
0.01
100
5
4
3
2
1
0
0.1
10
0.001
Figure 9. Maximum Safe Operating Area.
1
0
0.01
0.01
Figure 7. Gate Charge Characteristics.
0.1
0.0001
1
R
SINGLE PULSE
I
R
D
DS(ON)
= 6.7A
V
JA
T
GS
A
2
= 135
= 25
LIMIT
= 4.5V
D = 0.5
o
o
0.2
C
C/W
0.1
0.05
0.1
0.02
4
V
DS
0.01
Q
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE
g
0.001
, GATE CHARGE (nC)
6
1
Figure 11. Transient Thermal Response Curve.
DC
8
V
10s
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
DS
1s
= 5V
100ms
0.01
10
10ms
15V
1ms
10
12
100
10V
14
0.1
100
t
1
, TIME (sec)
1800
1500
1200
900
600
300
50
40
30
20
10
0
0.01
0
Figure 8. Capacitance Characteristics.
0
1
Figure 10. Single Pulse Maximum
0.1
4
V
Power Dissipation.
C
DS
ISS
, DRAIN TO SOURCE VOLTAGE (V)
10
1
t
8
1
, TIME (sec)
C
P(pk)
OSS
Duty Cycle, D = t
T
R
10
J
R
12
- T
JA
JA
(t) = r(t) * R
100
A
t
= 135
C
1
= P * R
t
RSS
2
SINGLE PULSE
R
JA
T
A
100
o
= 135°C/W
C/W
= 25°C
16
FDS6812A Rev B (W)
JA
1
V
JA
f = 1MHz
(t)
/ t
GS
2
= 0 V
1000
1000
20