FDS9933A Fairchild Semiconductor, FDS9933A Datasheet - Page 4

• Manufacturer Part Number: FDS9933A
• Description: MOSFET P-CH DUAL 20V 3.8A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS9933A

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 3.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 600pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.075 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.8 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 3.8A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 75mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS9933A

Typical Characteristics
5
4
3
2
1
0
0. 05
0. 01
Figure 9. Maximum Safe Operating Area.
0
Figure 7. Gate Charge Characteristics.
0 .5
50
10
I = -3 .8 A
3
0 .1
D
SING L E PUL S E
0 .005
0 .002
0 .001
R
0.05
0.02
0.01
0.5
0.2
0.1
V
J A
0. 0 001
T = 2 5°C
1
G S
A
= 135 °C/ W
2
A
= -4.5V
0 .3
D = 0 .5
- V
D S
Q , GA TE C H AR GE (nC )
0 .2
g
, DR A IN -SO UR C E V OLTA GE (V)
0 .1
4
0 .0 5
1
0 .0 2
V
0 .001
D S
0 .0 1
= -5 V
S i n g l e P u l s e
Figure 11. Transient Thermal Response Curve.
2
-10 V
6
-15 V
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
5
(continued)
8
10
0.01
30
10
0.1
t , TIME (s ec)
1
2000
1000
500
200
100
30
25
20
15
10
Figure 8. Capacitance Characteristics.
50
5
0
0. 01
0.1
Figure 10. Single Pulse Maximum
f = 1 M Hz
V
1
G S
0.2
= 0 V
-V
0. 1
Power Dissipation.
DS
, D R A IN T O S OU R CE V OLTA GE (V)
0.5
S IN GL E P UL S E TI ME (S EC )
0. 5
P(p k)
10
D u t y C y c l e, D = t /t
1
R
T - T
J
R
JA
t
1
( t ) = r( t ) * R
JA
A
2
t
= P * R
2
= 135 °C/W
10
R
SING LE PUL SE
J A
T = 2 5°C
JA
100
5
A
=13 5° C/W
1
(t)
JA
50 1 00
2
10
C iss
C rss
C oss
300
FDS9933A Rev. C
3 00
20