FDS9933A Fairchild Semiconductor, FDS9933A Datasheet - Page 2

• Manufacturer Part Number: FDS9933A
• Description: MOSFET P-CH DUAL 20V 3.8A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS9933A

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 3.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 600pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.075 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.8 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 3.8A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 75mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS9933A

Notes:
1: R
2: Pulse Test: Pulse Width
On Characteristics
Dynamic Characteristics
Switching Characteristics
C
C
C
Drain-Source Diode Characteristics and Maximum Ratings
Symbol
DMOS Electrical Characteristics
I
V
Off Characteristics
V
R
I
g
S
t
t
t
t
Q
Q
Q
BV
I
I
I
D(on)
iss
oss
rss
d(on)
r
d(off)
f
SD
FS
DSS
GSSF
GSSR
V
GS(th)
DS(on)
Scale 1 : 1 on letter size paper
g
gs
gd
the drain pins. R
GS(th)
T
DSS
V
JA
T
J
DSS
J
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
JC
is guaranteed by design while R
Parameter
300 s, Duty Cycle
(Note 2)
a) 78 C/W when
mounted on a 0.5 in
pad of 2 oz. copper.
(Note 2)
2.0%
JA
is determined by the user's board design.
V
2
V
I
V
V
V
V
V
I
V
V
V
V
V
D
V
V
V
V
D
DS
GS
DS
GS
GS
GS
DS
GS
GS
GS
GS
DS
= -250 A, Referenced to 25 C
DD
GS
DS
GS
= -250 A, Referenced to 25 C
= -10 V, V
= 0 V, I
= -16 V, V
= 8 V, V
= -8 V, V
= 0 V, I
= V
= -4.5 V, I
= -4.5 V, I
= -4.5 V, I
= -2.5 V, I
= -4.5 V, V
= -10 V, I
= -5 V, I
= -4.5 V, R
= -4.5 V
Test Conditions
GS
T
A
, I
= 25°C unless otherwise noted
D
S
D
DS
= -250 A
DS
D
= -1.3 A
= -250 A
GS
GS
D
D
D
D
D
= -0.5 A,
= 0 V
b) 125 C/W when
DS
= 0 V
= -3.8 A,
GEN
= -3.8 A
= -3.8 A, T
= -3.3 A
= -3.8 A
= 0 V, f = 1.0 MHz
= 0 V
mounted on a 0.02 in
pad of 2 oz. copper.
= -5.0 V
= 6.0
(Note 2)
J
= 125 C
2
Min
-20
-0.4
-10
Typ
0.058
0.086
0.084
-0.75
600
175
-16
80
-0.8
2.5
1.3
10
31
28
c) 135 C/W when
6
9
7
2
mounted on a 0.003 in
pad of 2 oz. copper.
Max Units
0.075
0.105
-100
100
0.12
-1.3
-1.2
-1.5
-1
12
18
50
42
10
FDS9933A Rev. C
mV/ C
mV/ C
pF
pF
pF
nA
nA
nC
nC
V
nC
ns
ns
ns
ns
A
V
V
A
S
A
2