FDJ1032C Fairchild Semiconductor, FDJ1032C Datasheet - Page 5

MOSFET N/P-CH 20V FLMP SC-75

FDJ1032C

Manufacturer Part Number
FDJ1032C
Description
MOSFET N/P-CH 20V FLMP SC-75
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDJ1032C

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 3.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.2A, 2.8A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
3nC @ 4.5V
Input Capacitance (ciss) @ Vds
200pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
SC75-6 FLMP
Configuration
Dual Dual Source
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.09 Ohm @ 4.5 V @ N Channel
Forward Transconductance Gfs (max / Min)
5 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V @ N Channel or +/- 8 V @ P Channel
Continuous Drain Current
3.2 A @ N Channel or 2.8 A @ P Channel
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDJ1032C
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDJ1032C Rev. B2(W)
Typical Characteristics : Q1
0.01
100
0.1
10
1
5
4
3
2
1
0
0.1
0
Figure 9. Maximum Safe Operating Area.
SINGLE PULSE
Figure 7. Gate Charge Characteristics.
R
R
θ JA
DS(ON)
V
T
I
GS
D
A
= 140
= -2.8A
= 25
0.5
= -4.5V
LIMIT
o
o
C
C/W
-V
DS
1
, DRAIN-SOURCE VOLTAGE (V)
Q
1
g
DC
, GATE CHARGE (nC)
1.5
1s
10s
100ms
10ms
V
2
DS
= -5V
1ms
10
2.5
100 µs
-15V
3
-10V
100
3.5
5
500
400
300
200
100
10
0
8
6
4
2
0
0.001
0
C
Figure 8. Capacitance Characteristics.
RSS
Figure 10. Single Pulse Maximum
0.01
C
OSS
-V
5
DS
Power Dissipation.
, DRAIN TO SOURCE VOLTAGE (V)
C
0.1
ISS
t
1
, TIME (sec)
10
1
10
SINGLE PULSE
R
15
θ JA
T
www.fairchildsemi.com
A
= 140°C/W
= 25°C
100
f = 1 MHz
V
GS
= 0 V
1000
20

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