FDJ1032C Fairchild Semiconductor, FDJ1032C Datasheet - Page 3

• Manufacturer Part Number: FDJ1032C
• Description: MOSFET N/P-CH 20V FLMP SC-75
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDJ1032C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.2A, 2.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 200pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: SC75-6 FLMP
• Configuration: Dual Dual Source
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V @ N Channel or +/- 8 V @ P Channel
• Continuous Drain Current: 3.2 A @ N Channel or 2.8 A @ P Channel
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDJ1032C Rev. B2(W)
Electrical Characteristics (Continued)
Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
V
t
Q
S
rr
Symbol
SD
R
g
gs
gd
rr
θJA
θJC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery
Charge
Parameter
θCA
is determined by the user's board design.
a)
80°C/W when mounted
on a 1in
copper (Single Opera-
tion).
2
pad of 2 oz
Q1:
V
Q2:
V
V
V
I
I
I
I
F
F
F
F
DS
DS
GS
GS
= –4.2A, d
= 5.9A, d
= –4.2A, d
= 5.9A, d
= –10 V, I
= 10 V, I
= 0 V, I
= 0 V, I
Test Conditions
S
S
IF
IF
D
IF
IF
= –1.3 A (Note 2)
= 1.3 A (Note 2)
/d
/d
D
/d
/d
= 3.2 A, V
t
t
= –2.8 A, V
t
t
3
= 100 A/µs
= 100 A/µs
= 100 A/µs
= 100 A/µs
GS
GS
= 4.5 V
= –4.5V
Type
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
b) 140°C/W when mounted on a
minimum pad of 2 oz copper
(Single Operation).
Min
Typ
0.65
0.75
–0.8
0.4
1.0
0.8
2.5
14
11
3
2
4
–1.25
Max Units
1.25
–1.2
1.2
www.fairchildsemi.com
4
3
nC
nC
nC
nS
nC
A
V