SI4532DY Fairchild Semiconductor, SI4532DY Datasheet - Page 3

• Manufacturer Part Number: SI4532DY
• Description: MOSFET N/P-CH DUAL 30V SO-8
• Manufacturer: Fairchild Semiconductor

Specifications of SI4532DY

• Fet Type: N and P-Channel
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 65 mOhm @ 3.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.9A, 3.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 235pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.065 Ohm @ 10 V @ N Channel
• Forward Transconductance Gfs (max / Min): 7 S, 5 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V @ N Channel or - 20 V @ P Channel
• Continuous Drain Current: 3.9 A @ N Channel or 3.5 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4532DY; SI4532DYTR

Device #1 FAN5009M
Package:
#Leads:
Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
HAST2
HTSL
TMCL1
Device #2 FAN5109M
Package:
#Leads:
Precondition Description:
P/C
X
X
X
-1
-1
-1
P/C
Standard
JESD22-A110 85%RH, 110C,
JESD22-A103 150C
JESD22-A104 -65C, 150C
Standard
JESD22-A113
Qualification Stress Test and Sample Size Detail
Conditions
0V
Conditions
Readpoints
TP1
264
168
100
TP2
500
500
TP3
1000
Read-
points
Samples
A
45
77
77
Sample
A
0
Pg. 3