SI4532DY Fairchild Semiconductor, SI4532DY Datasheet
![MOSFET N/P-CH DUAL 30V SO-8](/photos/5/44/54460/si4532dy_sml.jpg)
SI4532DY
Manufacturer Part Number
SI4532DY
Description
MOSFET N/P-CH DUAL 30V SO-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.SI4532DY.pdf
(4 pages)
Specifications of SI4532DY
Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
65 mOhm @ 3.9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.9A, 3.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
235pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.065 Ohm @ 10 V @ N Channel
Forward Transconductance Gfs (max / Min)
7 S, 5 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V @ N Channel or - 20 V @ P Channel
Continuous Drain Current
3.9 A @ N Channel or 3.5 A @ P Channel
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4532DY
SI4532DYTR
SI4532DYTR
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Si4532DY*
Dual N- and P-Channel Enhancement Mode Field Effect Transistor
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SI4532DY Summary of contents
Page 1
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Page 2
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Page 3
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Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...