FDC6303N Fairchild Semiconductor, FDC6303N Datasheet - Page 3

• Manufacturer Part Number: FDC6303N
• Description: IC FET DGTL N-CH DUAL 25V SSOT6
• Manufacturer: Fairchild Semiconductor

Specifications of FDC6303N

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 680mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 2.3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 50pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Module Configuration: Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 680mA
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 450mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Rohs Compliant: Yes
• Threshold Voltage Vgs Typ: 800mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC6303NTR

Typical Electrical Characteristics
1.5
1.2
0.9
0.6
0.3
0.8
0.6
0.4
0.2
1.6
1.4
1.2
0.8
0.6
0
1
0
1
Figure 3. On-Resistance Variation
-50
0
0
Figure 5. Transfer Characteristics.
Figure 1. On-Region Characteristics.
V
V
V
I =0.5 A
D
GS
GS
DS
-25
2.7
= 4.5 V
= 5.0V
= 4.5V
3.0
3.5
with Temperature.
0.5
V
V
0.5
DS
GS
T , JUNCTION TEMPERATURE (°C)
0
J
, DRAIN-SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
25
2.5
1
1
50
2.0
T = -55°C
J
1.5
75
1.5
1.5
100
125°C
2
25°C
125
2
2.5
150
0.0001
1.6
1.2
0.8
0.4
0.001
1.5
0.5
2
0
0.01
Figure 4. On Resistance Variation with
2
1
1
0.1
Figure 6. Body Diode Forward Voltage
0
1
0
Variation with Source Current and
Figure 2. On-Resistance Variation with
V
GS
1.5
Gate-To- Source Voltage.
Drain Current and Gate Voltage.
= 0V
V
GS
0.2
0.2
V
= 2.0V
SD
V
2
GS
, BODY DIODE FORWARD VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
0.4
I , DRAIN CURRENT (A)
D
0.4
T = 125°C
2.5
J
2.5
125°C
Temperature.
25°C
0.6
0.6
2.7
3
-55°C
25°C
3.0
3.5
0.8
0.8
3.5
4
1
4.5
1
ID= 0.5A
4.5
FDC6303N Rev.C
1.2
1.2
5