FDC6303N Fairchild Semiconductor, FDC6303N Datasheet

FDC6303N

Manufacturer Part Number

FDC6303N

Description

IC FET DGTL N-CH DUAL 25V SSOT6

Manufacturer

Fairchild Semiconductor

Datasheet

1.FDC6303N.pdf (5 pages)

Specifications of FDC6303N

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

450 mOhm @ 500mA, 4.5V

Drain To Source Voltage (vdss)

25V

Current - Continuous Drain (id) @ 25° C

680mA

Vgs(th) (max) @ Id

1.5V @ 250µA

Gate Charge (qg) @ Vgs

2.3nC @ 4.5V

Input Capacitance (ciss) @ Vds

50pF @ 10V

Power - Max

700mW

Mounting Type

Surface Mount

Package / Case

6-SSOT, SuperSOT-6

Module Configuration

Dual

Transistor Polarity

N Channel

Continuous Drain Current Id

680mA

Drain Source Voltage Vds

25V

On Resistance Rds(on)

450mohm

Rds(on) Test Voltage Vgs

4.5V

Rohs Compliant

Yes

Threshold Voltage Vgs Typ

800mV

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDC6303NTR

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Part Number

Manufacturer

Quantity

Price

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Part Number:

FDC6303N

Manufacturer:

Fairchild Semiconductor

Quantity:

47 057

Company:

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Part Number:

FDC6303N

Manufacturer:

FAIRCHILD/仙童

Quantity:

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Part Number:

FDC6303N

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ESD

THERMAL CHARACTERISTICS

Absolute Maximum Ratings

FDC6303N

Digital FET, Dual N-Channel

DSS

GSS

These dual N-Channel logic level enhancement mode field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state

resistance. This device has been designed especially for

low voltage applications as a replacement for digital

transistors in load switching applications. Since bias

resistors are not required this one N-Channel FET can

replace several digital transistors with different bias

resistors like the IMHxA series.

General Description

STG

SOT-23

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Maximum Power Dissipation

Operating and Storage Temperature Range

Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm)

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

SuperSOT

Mark: .303

- Continuous

- Pulsed

-6

= 25°C unless otherwise noted

SuperSOT

(Note 1a)

(Note 1b)

(Note 1)

-8

Features

25 V, 0.68 A continuous, 2 A Peak.

Very low level gate drive requirements allowing direct

operation in 3V circuits. V

Gate-Source Zener for ESD ruggedness.

>6kV Human Body Model

Replace multiple NPN digital transistors (IMHxA series)

with one DMOS FET.

SO-8

DS(ON)

= 0.6

= 0.45

FDC6303N

-55 to 150

0.68

140

6.0

0.9

0.7

SOT-223

@ V

GS(th)

@ V

< 1.5 V.

= 2.7 V

= 4.5 V.

August 1997

SOIC-16

FDC6303N Rev.C

Units

°C/W

°C

Related parts for FDC6303N

FDC6303N Summary of contents

Page 1

... DMOS FET. TM SuperSOT -8 SO 25°C unless otherwise noted A (Note 1a) (Note 1b) (Note 1a) (Note 1) August 1997 2.7 V DS(ON 0. 4.5 V. DS(ON) GS < 1.5 V. GS(th) SOIC-16 SOT-223 FDC6303N 25 8 0.68 2 0.9 0.7 -55 to 150 6.0 140 60 Units °C kV °C/W °C/W FDC6303N Rev.C ...

Page 2

... FR-4 in still air 180 C 0.005 in of pad of 2oz copper. Min Typ Max 55° 100 0.65 0.8 1.5 0.33 0.45 T =125°C 0.52 0.8 J 0.44 0.6 0 1.64 2.3 0.38 0.45 0.3 0.83 1.2 is guaranteed by JC FDC6303N Rev.C Units µA µ ...

Page 3

... Drain Current and Gate Voltage. 125°C 25°C 1.5 2 2 GATE TO SOURCE VOLTAGE (V) GS Gate-To- Source Voltage 125° 25°C -55°C 0 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. 1 1.2 ID= 0.5A 4.5 5 1.2 FDC6303N Rev.C ...

Page 4

... Figure 10. Single Pulse Maximum Power 0.01 0 TIME (sec MHz 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =See note 25° SINGLE PULSE TIME (SEC) Dissipation. R ( See Note 1b JA P(pk ( Duty Cycle 100 . C iss C oss C rss 25 100 300 300 FDC6303N Rev.C ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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