FDC6302P Fairchild Semiconductor, FDC6302P Datasheet - Page 2

• Manufacturer Part Number: FDC6302P
• Description: MOSFET P-CH DUAL 25V SSOT6
• Manufacturer: Fairchild Semiconductor

Specifications of FDC6302P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 Ohm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 120mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.31nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 11pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 10 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.135 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 0.12 A
• Power Dissipation: 900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: -200mA
• Drain Source Voltage Vds: -25V
• On Resistance Rds(on): 10ohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
DSS
GSS
D(ON)
D(on)
r
D(off)
f
S
FS
BV
V
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
DSS
GS(th)
design while R
DSS
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
/ T
/ T
J
J
a. 140
2oz copper.
CA
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage Current
Gate Threshold Voltage Temp. Coefficient
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
is determined by the user's board design.
O
C/W on a 0.125 in
(Note 2)
2
pad of
(Note 2)
(T
A
= 25
O
C unless otherwise noted )
b. 180
of 2oz copper.
O
C/W on a 0.005 in
Conditions
V
I
V
V
I
V
V
V
V
V
V
V
V
V
V
V
D
D
f = 1.0 MHz
GS
DS
GS
DS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= -250 µA, Referenced to 25
= -250 µA, Referenced to 25
= -20 V, V
= V
= -5 V, I
= -10 V, V
= -5 V, I
= 0 V, I
= -8 V, V
= -2.7 V, I
= -4.5 V, I
= -2.7 V, V
= -6 V, I
= -4.5 V, R
= -4.5 V
= 0 V, I
2
of pad
GS
, I
D
D
S
D
D
D
= -250 µA
= -0.7 A
= -250 µA
DS
= -0.2 A
= - 0.2 A,
D
D
GS
GS
= -0.2 A,
= 0 V
DS
GEN
= -0.05A
= -0.2 A
= 0 V
= 0 V,
= -5 V
= 50
(Note 2)
T
T
J
J
= 55°C
=125°C
o
o
C
C
-0.65
-0.05
Min
-25
0.135
10.6
0.22
0.12
0.05
Typ
-20
1.9
7.9
1.4
12
11
-1
-1
7
5
8
9
5
Max
-100
0.31
-1.5
-0.7
-1.3
JC
-10
13
10
18
12
16
18
10
-1
is guaranteed by
FDC6302P Rev.C
mV /
mV /
Units
µA
µA
nC
nC
nC
nA
ns
ns
ns
ns
V
V
A
S
A
V
pF
pF
pF
o
o
C
C