FDC6302P Fairchild Semiconductor, FDC6302P Datasheet

FDC6302P

Manufacturer Part Number

FDC6302P

Description

MOSFET P-CH DUAL 25V SSOT6

Manufacturer

Fairchild Semiconductor

Datasheet

1.FDC6302P.pdf (5 pages)

Specifications of FDC6302P

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

10 Ohm @ 200mA, 4.5V

Drain To Source Voltage (vdss)

25V

Current - Continuous Drain (id) @ 25° C

120mA

Vgs(th) (max) @ Id

1.5V @ 250µA

Gate Charge (qg) @ Vgs

0.31nC @ 4.5V

Input Capacitance (ciss) @ Vds

11pF @ 10V

Power - Max

700mW

Mounting Type

Surface Mount

Package / Case

6-SSOT, SuperSOT-6

Configuration

Dual

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

10 Ohm @ 4.5 V

Forward Transconductance Gfs (max / Min)

0.135 S

Drain-source Breakdown Voltage

25 V

Gate-source Breakdown Voltage

8 V

Continuous Drain Current

0.12 A

Power Dissipation

900 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Continuous Drain Current Id

-200mA

Drain Source Voltage Vds

-25V

On Resistance Rds(on)

10ohm

Rds(on) Test Voltage Vgs

-4.5V

Threshold Voltage Vgs Typ

-1V

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

FDC6302P

Manufacturer:

FAIRCHILD/仙童

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

FDC6302P-NL

Manufacturer:

FAIRCHILD/仙童

Quantity:

20 000

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Symbol

ESD

THERMAL CHARACTERISTICS

Absolute Maximum Ratings

DSS

GSS

General Description

These Dual P-Channel logic level enhancement mode field effect

transistors are produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance. This device

has been designed especially for low voltage applications as a

replacement for digital transistors in load switchimg applications.

Since bias resistors are not required this one P-Channel FET

can replace several digital transistors with different bias resistors

like the IMBxA series.

FDC6302P

Digital FET, Dual P-Channel

STG

SOT-23

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Maximum Power Dissipation

Operating and Storage Temperature Range

Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm)

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

SuperSOT

- Continuous

- Pulsed

-6

= 25

C unless other wise noted

SuperSOT

(Note 1a)

(Note 1b)

(Note 1a)

(Note 1)

-8

Features

SO-8

-25 V, -0.12 A continuous, -0.5 A Peak.

Very low level gate drive requirements allowing direct

operation in 3V circuits. V

Gate-Source Zener for ESD ruggedness.

>6kV Human Body Model

Replace multiple PNP digital transistors (IMHxA series) with

one DMOS FET.

DS(ON)

FDC6302P

-55 to 150

-0.12

-0.5

140

6.0

-25

0.9

0.7

-8

= 13

= 10

SOT-223

GS(th)

@ V

< 1.5V.

= -2.7 V

= -4.5 V.

October 1997

SOIC-16

FDC6302P Rev.C

Units

°C/W

°C

Related parts for FDC6302P

FDC6302P Summary of contents

Page 1

... Replace multiple PNP digital transistors (IMHxA series) with one DMOS FET. TM SuperSOT -8 SO unless other wise noted A (Note 1a) (Note 1b) (Note 1a) (Note 1) October 1997 -2.7 V DS(ON -4.5 V. DS(ON) GS < 1.5V. GS(th) SOIC-16 SOT-223 FDC6302P Units -25 -8 -0.12 -0.5 0.9 0.7 -55 to 150 6.0 140 °C/W 60 °C/W FDC6302P Rev °C kV ...

Page 2

... 1.0 MHz -0 -4 GEN 180 C 0.005 in of pad of 2oz copper. Min Typ Max - - 55°C J -100 o 1.9 C -0.65 -1 -1.5 10.6 7.9 T =125° -0.05 0.135 0.22 0.31 0.12 0.05 -0.7 -1 -1.3 (Note 2) JC Units µA -10 µ guaranteed by FDC6302P Rev.C ...

Page 3

... DRAIN CURRENT (A) D Drain Current and Gate Voltage -0.05A D A 125 ° ,GATE TO SOURCE VOLTAGE (V) GS Gate-To- Source Voltage 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Temperature. -4.5 0 1.2 FDC6302P Rev.C ...

Page 4

... Figure 8. Capacitance Characteristics 0. Figure 10. Single Pulse Maximum Power Dissipation. 0.01 0 TIME (sec iss C oss C rss 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =See note 25° 100 SINGLE PULSE TIME (SEC) R ( See Note 1b JA P(pk ( Duty Cycle 100 300 FDC6302P Rev.C 25 300 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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