FDG6301N Fairchild Semiconductor, FDG6301N Datasheet - Page 2

• Manufacturer Part Number: FDG6301N
• Description: MOSFET N-CHAN DUAL 25V SC70-6
• Manufacturer: Fairchild Semiconductor

Specifications of FDG6301N

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 220mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 9.5pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.2 S
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 0.22 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 220mA
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 4ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDG6301NTR

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