FDG6301N Fairchild Semiconductor, FDG6301N Datasheet

FDG6301N

Manufacturer Part Number

FDG6301N

Description

MOSFET N-CHAN DUAL 25V SC70-6

Manufacturer

Fairchild Semiconductor

Datasheet

1.FDG6301N.pdf (5 pages)

Specifications of FDG6301N

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

4 Ohm @ 220mA, 4.5V

Drain To Source Voltage (vdss)

25V

Current - Continuous Drain (id) @ 25° C

220mA

Vgs(th) (max) @ Id

1.5V @ 250µA

Gate Charge (qg) @ Vgs

0.4nC @ 4.5V

Input Capacitance (ciss) @ Vds

9.5pF @ 10V

Power - Max

300mW

Mounting Type

Surface Mount

Package / Case

SC-70-6, SC-88, SOT-363

Configuration

Dual

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

4 Ohm @ 4.5 V

Forward Transconductance Gfs (max / Min)

0.2 S

Drain-source Breakdown Voltage

25 V

Gate-source Breakdown Voltage

8 V

Continuous Drain Current

0.22 A

Power Dissipation

300 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Module Configuration

Dual

Continuous Drain Current Id

220mA

Drain Source Voltage Vds

25V

On Resistance Rds(on)

4ohm

Rds(on) Test Voltage Vgs

4.5V

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDG6301NTR

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Symbol

ESD

THERMAL CHARACTERISTICS

Absolute Maximum Ratings

FDG6301N

Dual N-Channel, Digital FET

DSS

GSS

These dual N-Channel logic level enhancement mode

field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This

very high density process is especially tailored to

minimize on-state resistance. This device has been

designed especially for low voltage applications as a

replacement for bipolar digital transistors and small

signal MOSFETs.

General Description

Units inside the carrier can be of either orientation and will not affect the functionality of the device.

The pinouts are symmetrical; pin 1 and 4 are interchangeable.

STG

SC70-6

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain/Output Current

Maximum Power Dissipation

Operating and Storage Temperature Range

Electrostatic Discharge Rating MIL-STD-883D

Human Body Model(100 pF / 1500 )

Thermal Resistance, Junction-to-Ambient

SC70-6

SOT-23

- Continuous

- Pulsed

= 25°C unless otherwise noted

SuperSOT

(Note 1)

-6

Features

SuperSOT

25 V, 0.22 A continuous, 0.65 A peak.

Very low level gate drive requirements allowing direct

operation in 3 V circuits (V

Gate-Source Zener for ESD ruggedness

(>6kV Human Body Model).

Compact industry standard SC70-6 surface mount

package.

-8

DS(ON)

1 or 4

2 or 5

FDG6301N

3 or 6

-55 to 150

0.22

0.65

415

6.0

0.3

= 4

= 5

SO-8

GS(th)

@ V

< 1.5 V).

= 4.5 V,

= 2.7 V.

SOT-223

4 or 1

6 or 3

5 or 2

July 1999

FDG6301N Rev.E

°C/W

Units

°C

Related parts for FDG6301N

FDG6301N Summary of contents

Page 1

... Human Body Model). Compact industry standard SC70-6 surface mount package. TM SuperSOT -6 SuperSOT 25°C unless otherwise noted A (Note 1) July 1999 4.5 V, DS(ON 2.7 V. DS(ON) GS < 1.5 V). GS(th) SO-8 -8 SOT-223 * FDG6301N 25 8 0.22 0.65 0.3 -55 to 150 6.0 415 * Units °C kV °C/W 1 FDG6301N Rev.E ...

Page 2

... 0.25 A (Note 415 C/W on minimum pad mounting on FR-4 board in still air. JA Min Typ Max 55° 100 0.65 0.85 1 -2.1 2 =125°C 5 3.7 5 0.22 0.2 9 3.2 7 0.29 0.4 0.12 0.03 0.25 0.8 1.2 is guaranteed JC FDG6301N Rev.E Units µA µ ...

Page 3

... Drain Current and Gate Voltage . I = 0.10A D T =125°C A 25° ,GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125°C J 25°C -55°C 0 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. 5.0V 0.4 5 1.2 FDG6301N Rev.E1 ...

Page 4

... Thermal characterization performed using the conditions described in note 1. Transient thermal response will change depending on the circuit board design. C iss C oss C rss = 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =415°C 25°C A 0.001 0.01 0 SINGLE PULSE TIME (SEC) Dissipation. R ( =415 °C/W JA P(pk ( Duty Cycle 100 FDG6301N Rev.E1 25 200 200 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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