SI4816BDY-T1-GE3 Vishay, SI4816BDY-T1-GE3 Datasheet - Page 9

• Manufacturer Part Number: SI4816BDY-T1-GE3
• Description: MOSFET DL N-CH 30V 6.8A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4816BDY-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 6.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.8A, 8.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 5V
• Power - Max: 1W, 1.25W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.0185 Ohm @ 10 V @ Channel 1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.8 A @ Channel 1 or 8.2 A @ Channel 2
• Power Dissipation: 1000 mW @ Channel 1 or 1250 mW @ Channel 2
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Drain Source Voltage Vds: 30V
• Threshold Voltage Vgs Typ: 3V
• Power Dissipation Pd: 1.25W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 8
• Termination Type: SMD
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4816BDY-T1-GE3TR

SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73026.
Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
0.0001
0.001
0.01
0.1
20
10
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Reverse Current vs. Junction Temperature
25
30 V
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Temperature (°C)
75
24 V
100
200
160
120
80
40
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0
125
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150
6
DS
– Drain-to-Source Voltage (V)
C
oss
Capacitance
12
18
10
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24
0.3
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J
V
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Forward Voltage Drop
F
− Forward Voltage Drop (V)
0.6
T
Vishay Siliconix
J
= 25 °C
Si4816BDY
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www.vishay.com
1.2
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