si4816bdy Vishay, si4816bdy Datasheet

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si4816bdy

Manufacturer Part Number
si4816bdy
Description
Dual N-channel 30-v D-s Mosfet With Schottky Diode
Manufacturer
Vishay
Datasheet

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Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 73026
S-61962-Rev. C, 09-Oct-06
Channel-1
Channel-2
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
V
DS
Ordering Information: Si4816BDY-T1-E3 (Lead (Pb)-free)
30
(V)
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
A/S
A/S
V
G
G
DS
30
1
2
2
2
(V)
Diode Forward Voltage
1
2
3
4
0.0225 at V
0.0185 at V
0.0115 at V
0.016 at V
0.50 V at 1.0 A
Top View
r
V
J
a
DS(on)
SO-8
SD
= 150 °C)
a
(V)
GS
GS
GS
GS
(Ω)
= 4.5 V
= 4.5 V
= 10 V
= 10 V
a
8
7
6
5
Steady State
Steady State
D
D
D
D
L = 0.1 mH
T
T
T
T
1
2
2
2
I
t ≤ 10 sec
D
11.4
/S
/S
/S
a
A
A
A
A
6.8
6.0
9.5
(A)
1
1
1
= 25 °C
= 70 °C
= 25 °C
= 70 °C
A
I
= 25 °C, unless otherwise noted
Q
F
2.0
g
(A)
11.6
7.8
New Product
(Typ)
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
DM
I
I
AS
thJA
thJF
DS
GS
AS
D
S
D
stg
FEATURES
• LITTLE FOOT
• 100 % R
N-Channel 1
N-Channel 2
MOSFET
MOSFET
Typ
100
10 sec
G
G
72
51
Channel-1
1
2
6.8
5.5
1.4
0.9
1
Channel-1
Max
125
g
90
63
30
10
5
Steady State
Tested
D
S
1
2
0.64
®
5.8
4.6
0.9
1.0
Plus Power MOSFET
Typ
43
82
25
Channel-2
- 55 to 150
A
Schottky Diode
30
20
S
Max
100
10 sec
1
53
30
/D
11.4
9.0
2.2
2.4
1.5
2
Channel-2
Vishay Siliconix
Typ
48
80
28
40
20
20
Si4816BDY
Steady State
Schottky
1.15
1.25
8.2
6.5
0.8
www.vishay.com
Max
100
60
35
RoHS
COMPLIANT
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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si4816bdy Summary of contents

Page 1

... Top View Ordering Information: Si4816BDY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current Avalanche Energy a Maximum Power Dissipation ...

Page 2

... Si4816BDY Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... 100 ° 125 ° 1200 1000 Si4816BDY Vishay Siliconix Min Typ Max 0.47 0.50 0.36 0.42 0.004 0.100 0 125 ° ° °C 0 0.0 ...

Page 4

... Si4816BDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless noted 6 – Total Gate Charge (nC) g Gate Charge 150 ° 0.0 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 0.0 - 0.2 - 0.4 - 0 ...

Page 5

... DS(on) Safe Operating Area Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Si4816BDY Vishay Siliconix I Limited 100 100 is specified Notes: ...

Page 6

... Si4816BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless noted thru – Drain-to-Source Voltage (V) DS Output Characteristics 0.020 0.016 0.012 0.008 0.004 0.000 – Drain Current (A) D On-Resistance vs. Drain Current ...

Page 7

... D(on) Limited °C C 0.1 Single Pulse BV Limited DSS 0.01 0 – Drain-to-Source Voltage (V) DS > *V minimum V at which Safe Operating Area Si4816BDY Vishay Siliconix 0.05 0.04 0. 0.01 0. – Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 100 0.001 ...

Page 8

... Si4816BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient - 2 10 Square Wave Pulse Duration (sec) ...

Page 9

... Document Number: 73026 S-61962-Rev. C, 09-Oct- 100 125 150 0.0 200 160 120 80 C oss – Drain-to-Source Voltage (V) DS Capacitance Si4816BDY Vishay Siliconix T = 150 ° °C J 0.3 0.6 0.9 1.2 V − Forward Voltage Drop (V) F Forward Voltage Drop 24 30 www.vishay.com 1.5 9 ...

Page 10

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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