SI4816BDY-T1-GE3 Vishay, SI4816BDY-T1-GE3 Datasheet - Page 2

• Manufacturer Part Number: SI4816BDY-T1-GE3
• Description: MOSFET DL N-CH 30V 6.8A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4816BDY-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 6.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.8A, 8.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 5V
• Power - Max: 1W, 1.25W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.0185 Ohm @ 10 V @ Channel 1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.8 A @ Channel 1 or 8.2 A @ Channel 2
• Power Dissipation: 1000 mW @ Channel 1 or 1250 mW @ Channel 2
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Drain Source Voltage Vds: 30V
• Threshold Voltage Vgs Typ: 3V
• Power Dissipation Pd: 1.25W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 8
• Termination Type: SMD
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4816BDY-T1-GE3TR

Si4816BDY
Vishay Siliconix
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
www.vishay.com
2
MOSFET SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
a
b
b
b
b
Symbol
R
V
I
J
t
t
I
I
DS(on)
V
GS(th)
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
R
t
= 25 °C, unless otherwise noted
SD
t
t
rr
gd
fs
gs
r
f
g
g
V
V
V
DS
I
I
DS
D
D
DS
I
I
F
≅ 1 A, V
≅ 1 A, V
= 15 V, V
F
= 30 V, V
V
= 15 V, V
= 2.2 A, dI/dt = 100 µA/µs
V
V
V
V
V
V
V
V
V
= 1.3 A, dI/dt = 100 A/µs
V
V
DS
GS
DS
DS
GS
GS
DD
DD
DS
DS
I
I
GS
DS
S
S
= V
= 1 A, V
= 1 A, V
= 10 V, I
= 15 V, I
= 4.5 V, I
= 4.5 V, I
= 0 V, V
= 30 V, V
= 5 V, V
= 15 V, R
= 15 V, R
= 10 V, I
= 15 V, I
Channel-1
Channel-2
Channel-1
GEN
Channel-2
GEN
Test Conditions
GS
GS
GS
GS
, I
= 5 V, I
= 10 V, R
= 10 V, R
= 0 V, T
= 5 V, I
D
GS
GS
GS
D
D
GS
D
D
D
D
= 250 µA
GS
L
L
= 11.4 A
= 11.4 A
= 6.8 A
= 6.8 A
= 6.0 A
= 9.5 A
= 0 V
= 0 V
= 10 V
= 15 Ω
= 15 Ω
= 20 V
= 0 V
D
D
J
= - 11.4 A
g
g
= 85 °C
= 6.8 A
= 6 Ω
= 6 Ω
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
1.0
1.0
1.5
0.9
20
30
0.0155
0.0093
0.0185
S09-0394-Rev. D, 09-Mar-09
Typ.
0.013
0.73
0.47
11.6
7.8
2.9
4.8
2.3
3.7
3.0
1.8
30
31
11
13
24
31
11
20
25
9
9
9
Document Number: 73026
a
0.0185
0.0115
0.0225
0.016
Max.
2000
100
100
100
3.0
3.0
1.1
0.5
4.5
2.7
15
10
18
17
20
15
15
40
50
15
17
35
40
1
Unit
nA
µA
nC
ns
Ω
Ω
V
A
S
V