SI4816BDY-T1-GE3 Vishay, SI4816BDY-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI4816BDY-T1-GE3
• Description: MOSFET DL N-CH 30V 6.8A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4816BDY-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 6.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.8A, 8.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 5V
• Power - Max: 1W, 1.25W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.0185 Ohm @ 10 V @ Channel 1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.8 A @ Channel 1 or 8.2 A @ Channel 2
• Power Dissipation: 1000 mW @ Channel 1 or 1250 mW @ Channel 2
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Drain Source Voltage Vds: 30V
• Threshold Voltage Vgs Typ: 3V
• Power Dissipation Pd: 1.25W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 8
• Termination Type: SMD
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4816BDY-T1-GE3TR

Si4816BDY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
0.020
0.016
0.012
0.008
0.004
0.000
40
32
24
16
8
0
6
5
4
3
2
1
0
0
0
0
V
I
D
DS
On-Resistance vs. Drain Current
= 9.5 A
5
V
V
= 15 V
1
V
3
GS
GS
DS
Q
Output Characteristics
= 10 thru 5 V
= 4.5 V
g
– Drain-to-Source Voltage (V)
I
10
D
– Total Gate Charge (nC)
– Drain Current (A)
Gate Charge
2
6
3 V
15
4 V
3
9
V
20
GS
= 10 V
2 V
12
4
25
30
15
5
2000
1600
1200
800
400
1.6
1.4
1.2
1.0
0.8
0.6
40
32
24
16
0
8
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
0.5
- 25
C
V
I
D
GS
rss
= 9.5 A
V
V
6
DS
= 10 V
1.0
GS
T
Transfer Characteristics
J
C
0
– Drain-to-Source Voltage (V)
– Junction Temperature (°C)
oss
– Gate-to-Source Voltage (V)
1.5
25
Capacitance
12
2.0
S09-0394-Rev. D, 09-Mar-09
T
25 °C
50
C
C
Document Number: 73026
= 125 °C
2.5
iss
18
75
3.0
100
3.5
24
- 55 °C
125
4.0
30
150
4.5