SI4816BDY-T1-GE3 Vishay, SI4816BDY-T1-GE3 Datasheet
SI4816BDY-T1-GE3
Specifications of SI4816BDY-T1-GE3
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SI4816BDY-T1-GE3 Summary of contents
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... A A Top View Ordering Information: Si4816BDY-T1-E3 (Lead (Pb)-free) Si4816BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current Avalanche Energy a Maximum Power Dissipation ...
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... Si4816BDY Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...
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... 1 125 ° 100 ° 125 ° 1200 1000 Si4816BDY Vishay Siliconix Min. Typ. Max. 0.47 0.50 0.36 0.42 0.004 0.100 0 125 ° ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V – Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... Si4816BDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6 – Total Gate Charge (nC) g Gate Charge 150 ° 0.0 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 0.0 - 0.2 - 0.4 - 0 – Temperature (°C) ...
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... V – Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4816BDY Vishay Siliconix I Limited 100 100 is specified Notes Duty Cycle Per Unit Base = R = 100 ° ...
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... Si4816BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru – Drain-to-Source Voltage (V) DS Output Characteristics 0.020 0.016 0.012 0.008 0.004 0.000 – Drain Current (A) D On-Resistance vs. Drain Current 9 – Total Gate Charge (nC) g Gate Charge www.vishay.com 2000 1600 ...
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... Limited DS(on D(on) Limited °C C 0.1 Single Pulse BVDSS Limited 0.01 0 – Drain-to-Source Voltage (V) DS > minimum V at which Safe Operating Area Si4816BDY Vishay Siliconix 0.05 0.04 0. 0.01 0. – Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 100 0.001 0.01 0.1 1 ...
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... Si4816BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient ...
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... Document Number: 73026 S09-0394-Rev. D, 09-Mar-09 10 100 125 150 200 160 120 80 C oss – Drain-to-Source Voltage (V) DS Capacitance Si4816BDY Vishay Siliconix T = 150 ° ° 0.0 0.3 0.6 0.9 1.2 V − Forward Voltage Drop (V) F Forward Voltage Drop 24 30 www.vishay.com 1.5 9 ...
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