SI4816BDY-T1-GE3 Vishay, SI4816BDY-T1-GE3 Datasheet - Page 7

• Manufacturer Part Number: SI4816BDY-T1-GE3
• Description: MOSFET DL N-CH 30V 6.8A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4816BDY-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 6.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.8A, 8.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 5V
• Power - Max: 1W, 1.25W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.0185 Ohm @ 10 V @ Channel 1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.8 A @ Channel 1 or 8.2 A @ Channel 2
• Power Dissipation: 1000 mW @ Channel 1 or 1250 mW @ Channel 2
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Drain Source Voltage Vds: 30V
• Threshold Voltage Vgs Typ: 3V
• Power Dissipation Pd: 1.25W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 8
• Termination Type: SMD
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4816BDY-T1-GE3TR

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73026
S09-0394-Rev. D, 09-Mar-09
0.00001
0.0001
0.001
0.01
0.1
40
10
10
1
1
1
0.0
0
Reverse Current vs. Junction Temperature
Source-Drain Diode Forward Voltage
0.2
25
V
T
SD
V
J
DS
0.4
= 150 °C
– Source-to-Drain Voltage (V)
= 30 V
T
50
J
– Temperature (°C)
0.6
75
V
0.8
DS
= 24 V
100
T
1.0
J
0.01
100
0.1
= 25 °C
10
1
0.1
125
Limited by R
1.2
* V
Limited
I
D(on)
GS
Single Pulse
T
C
>
1.4
150
= 25 °C
V
minimum V
DS
DS(on)
Safe Operating Area
–
1
Drain-to-Source Voltage (V)
*
GS
BVDSS Limited
at which R
0.05
0.04
0.03
0.02
0.01
0.00
100
DS(on)
10
80
60
40
20
0
0.001
0
I
is specified
DM
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Limited
1 ms
10 ms
100 ms
1 s
10 s
DC
V
2
0.01
GS
100
– Gate-to-Source Voltage (V)
4
Time (s)
0.1
Vishay Siliconix
Si4816BDY
6
I
D
= 9.5 A
www.vishay.com
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