SI4816BDY-T1-GE3 Vishay, SI4816BDY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4816BDY-T1-GE3
• Description: MOSFET DL N-CH 30V 6.8A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4816BDY-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18.5 mOhm @ 6.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.8A, 8.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 5V
• Power - Max: 1W, 1.25W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.0185 Ohm @ 10 V @ Channel 1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 5.8 A @ Channel 1 or 8.2 A @ Channel 2
• Power Dissipation: 1000 mW @ Channel 1 or 1250 mW @ Channel 2
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Drain Source Voltage Vds: 30V
• Threshold Voltage Vgs Typ: 3V
• Power Dissipation Pd: 1.25W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 8
• Termination Type: SMD
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4816BDY-T1-GE3TR

Si4816BDY
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.0
40
10
6
5
4
3
2
1
0
1
- 50
0.0
0
- 25
Source-Drain Diode Forward Voltage
0.2
V
I
D
DS
= 6.8 A
2
V
= 15 V
SD
Q
0
0.4
T
g
J
– Source-to-Drain Voltage (V)
Threshold Voltage
– Total Gate Charge (nC)
= 150 °C
T
J
25
– Temperature (°C)
Gate Charge
4
0.6
50
0.8
I
D
6
= 250 µA
75
T
1.0
J
100
= 25 °C
8
1.2
125
150
1.4
10
0.05
0.04
0.03
0.02
0.01
0.00
100
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
0
- 50
0.001
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Junction Temperature
V
I
- 25
D
GS
= 6.8 A
= 10 V
V
2
GS
0.01
T
0
J
– Gate-to-Source Voltage (V)
– Junction Temperature (°C)
25
4
Time (s)
I
D
0.1
50
S09-0394-Rev. D, 09-Mar-09
= 6.8 A
Document Number: 73026
6
75
100
1
8
125
150
10
10