FDS8928A Fairchild Semiconductor, FDS8928A Datasheet - Page 7

• Manufacturer Part Number: FDS8928A
• Description: MOSFET N/P-CH DUAL 30/20V 8SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of FDS8928A

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 5.5A, 4.5V
• Drain To Source Voltage (vdss): 30V, 20V
• Current - Continuous Drain (id) @ 25° C: 5.5A, 4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 28nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 900pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 20 S, 13 S
• Drain-source Breakdown Voltage: 30 V @ N Channel or 20 V @ P Channel
• Gate-source Breakdown Voltage: 8 V @ N Channel or - 8 V @ P Channel
• Continuous Drain Current: 5.5 A @ N Channel or 4 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8928ATR

Typical Electrical Characteristics: P-Channel
0.03
0.01
0.3
0.1
Figure 17. Gate Charge Characteristics.
5
4
3
2
1
0
50
20
10
Figure 19. Maximum Safe Operating Area.
5
1
0
0.1
I
D
=-4.0A
SINGLE PULSE
R
0.2
V
JA
T = 25°C
GS
A
A
= 135°C/W
4
= -4.5V
- V
0.5
DS
Q
, DRAIN-SOURCE VOLTAGE (V)
g
, GATE CHARGE (nC)
1
8
2
12
5
V
DS
= -5V
10
16
-15V
20 30
-10V
20
50
(continued)
3000
2000
1000
30
25
20
15
10
500
200
100
5
0
0.01
50
Figure 18. Capacitance Characteristics.
0.1
Figure 20. Single Pulse Maximum Power
f = 1 MHz
V
GS
= 0 V
0.2
0.1
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.5
SINGLE PULSE TIME (SEC)
Dissipation.
0.5
1
2
10
R
SINGLE PULSE
JA
5
T = 25°C
A
=135 °C/W
50 100
10
C iss
C oss
C rss
FDS8928A Rev. B
20
300