FDS8928A Fairchild Semiconductor, FDS8928A Datasheet

MOSFET N/P-CH DUAL 30/20V 8SOIC

FDS8928A

Manufacturer Part Number
FDS8928A
Description
MOSFET N/P-CH DUAL 30/20V 8SOIC
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDS8928A

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 5.5A, 4.5V
Drain To Source Voltage (vdss)
30V, 20V
Current - Continuous Drain (id) @ 25° C
5.5A, 4A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
28nC @ 4.5V
Input Capacitance (ciss) @ Vds
900pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.03 Ohm @ 4.5 V @ N Channel
Forward Transconductance Gfs (max / Min)
20 S, 13 S
Drain-source Breakdown Voltage
30 V @ N Channel or 20 V @ P Channel
Gate-source Breakdown Voltage
8 V @ N Channel or - 8 V @ P Channel
Continuous Drain Current
5.5 A @ N Channel or 4 A @ P Channel
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS8928ATR

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Part Number
Manufacturer
Quantity
Price
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© 1998 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N- and P -Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state
performance. These devices are particularly suited for low
voltage applications such as notebook computer power
management and other battery powered circuits where fast
switching, low in-line power loss, and resistance
transients are needed.
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
FDS8928A
D
DSS
GSS
D
J
,T
JA
JC
STG
SOT-23
D1
resistance
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
SO-8
D1
D2
D2
and
SuperSOT
- Pulsed
pin 1
provide
TM
S1
-6
G1
superior
T
A
= 25°C unless otherwise noted
S2
SuperSOT
G2
switching
(Note 1)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
TM
to
-8
Features
N-Channel 5.5 A,30 V, R
P-Channel -4 A,-20 V, R
High density cell design for extremely low R
High power and current handling capability in a widely used
surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.
SO-8
N-Channel
5.5
20
30
8
6
5
8
7
-55 to 150
R
R
SOT-223
DS(ON)
1.6
0.9
DS(ON)
78
40
DS(ON)
DS(ON)
2
1
=0.030
=0.055
=0.038
=0.072
P-Channel
-20
-20
-8
-4
@ V
@ V
@ V
@ V
3
2
1
1
4
DS(ON)
GS
GS
GS
GS
=4.5 V
SOIC-16
=-4.5 V
=-2.5 V.
=2.5 V.
.
July 1998
FDS8928A Rev. B
Units
°C/W
°C/W
W
°C
V
V
A

Related parts for FDS8928A

FDS8928A Summary of contents

Page 1

... A N-Channel (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) July 1998 =0.030 @ V =4.5 V DS(ON =0.038 @ V =2.5 V. DS(ON) GS =0.055 @ V =-4.5 V DS(ON =0.072 @ V =-2.5 V. DS(ON DS(ON) SOT-223 SOIC- P-Channel -20 2 1.6 1 0.9 -55 to 150 78 40 Units °C °C/W °C/W FDS8928A Rev. B ...

Page 2

... MHz P- 1.0 MHz N-Ch P-Ch Min Typ Max Units mV/ C -23 1 µA -1 µA All 100 nA All -100 nA 0.4 0. -0 0.025 0.03 0.031 0.038 0.043 0.055 0.059 0.072 900 pF 1130 410 pF 480 110 pF 120 FDS8928A Rev. B ...

Page 3

... Type Min Typ Max Units P-Ch 260 360 N- P-Ch 90 125 N- P-Ch 2.8 N-Ch 6.3 nC P-Ch 3.2 N-Ch 1.3 A P-Ch -1.3 A N-Ch 0.68 1.2 V P-Ch -0.7 -1 guaranteed 135 C 0.003 in 2 pad of 2oz copper. FDS8928A Rev. B ...

Page 4

... T = 125°C A 25° GATE TO SOURCE VOLTAGE (V) GS Figure 4. On-Resistance Variation with Gate-to-Source Voltage 125°C A 25°C -55°C 0 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 1.2 FDS8928A Rev. B ...

Page 5

... Figure 8. Capacitance Characteristics 0. Figure 10. Single Pulse Maximum Power MHz 0.1 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =135 °C 25°C A 0.1 0.5 10 SINGLE PULSE TIME (SEC) Dissipation. C iss C oss C rss 30 50 100 300 FDS8928A Rev. B ...

Page 6

... DRAIN CURRENT (A) D Drain Current and Gate Voltage - 125°C A 25° GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage =125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. FDS8928A Rev 1.2 ...

Page 7

... V = -5V DS 1000 -10V -15V 500 200 100 50 0 Figure 18. Capacitance Characteristics 0. Figure 20. Single Pulse Maximum Power MHz 0.2 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =135 °C 25°C A 0.1 0 100 SINGLE PULSE TIME (SEC) Dissipation. C iss C oss C rss 20 300 FDS8928A Rev. B ...

Page 8

... Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1. Transient thermalresponse will change depending on the circuit board design. (continued) 0.01 0 TIME (sec ( 135 °C/W JA P(pk ( Duty Cycle 100 300 FDS8928A Rev. B ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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