NDS8858H Fairchild Semiconductor, NDS8858H Datasheet - Page 16

• Manufacturer Part Number: NDS8858H
• Description: MOSFET N+P 30V 4.8A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS8858H

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.3A, 4.8A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 720pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Common Quad Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.035 Ohms
• Drain-source Breakdown Voltage: +/- 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.3 A, - 4.8 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS8858HTR

same safeguards for sole source products as multi-source products.
We thank you for your attention in this matter. Should you have any questions,
please do not hesitate to contact your Fairchild Semiconductor salesperson.
Sincerely,
Fairchild Semiconductor
c.c.: Celsa Gonzalez
Tom Hudson
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