NDS9952A Fairchild Semiconductor, NDS9952A Datasheet - Page 7
NDS9952A
Manufacturer Part Number
NDS9952A
Description
MOSFET N+P 30V 2.9A 8-SOIC
Manufacturer
Fairchild Semiconductor
Type
Power MOSFETr
Datasheet
1.NDS9952A.pdf
(10 pages)
Specifications of NDS9952A
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
80 mOhm @ 1A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.7A, 2.9A
Vgs(th) (max) @ Id
2.8V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
320pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N And P Channel
Continuous Drain Current Id
3.7A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
80mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.7V
Rohs Compliant
Yes
Number Of Elements
2
Polarity
N/P
Channel Mode
Enhancement
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Power Dissipation
2W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDS9952ATR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
NDS9952A
Manufacturer:
FSC
Quantity:
47 500
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Part Number:
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Manufacturer:
NS
Quantity:
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NDS9952A
Manufacturer:
FSC
Quantity:
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Manufacturer:
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Part Number:
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Manufacturer:
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Typical Electrical Characteristics: P-Channel
Figure 22. P-Channel Transconductance Variation
1.08
1.06
1.04
1.02
0.98
0.96
0.94
Figure 20. P-Channel Capacitance Characteristics.
6
5
4
3
2
1
0
1 0 0 0
1.1
Figure 18. P-Channel Breakdown Voltage
8 0 0
5 0 0
3 0 0
2 0 0
1 0 0
0
1
5 0
with Drain Current and Temperature.
-50
V
0.1
DS
= -15V
I
Variation with Temperature.
D
-25
= -250µA
0.2
f = 1 MHz
V
-2
GS
= 0V
T
-V
0
J
DS
, JUNCTION TEMPERATURE (°C)
0.5
I
, DRAIN TO SOURCE VOLTAGE (V)
D
25
, DRAIN CURRENT (A)
-4
1
50
T
J
2
= -55°C
-6
75
25°C
5
100
125°C
-8
1 0
125
C iss
C oss
C rss
150
-10
(continued)
3 0
0.001
Figure 21. P-Channel Gate Charge Characteristics.
10
0.01
8
6
4
2
0
0.5
0.1
1 0
Figure 19. P-Channel Body Diode Forward
0
5
1
0.2
I
D
V
Voltage Variation with Current and
Temperature
= -2.9A
GS
T = 125°C
J
2
= 0V
0.4
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Q
4
0.6
g
.
, GATE CHARGE (nC)
25°C
0.8
6
V
DS
-55°C
= -10V
1
8
1.2
10
-20V
NDS9952A.SAM
-15V
1.4
12