NDS9952A Fairchild Semiconductor, NDS9952A Datasheet - Page 2

• Manufacturer Part Number: NDS9952A
• Description: MOSFET N+P 30V 2.9A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of NDS9952A

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.7A, 2.9A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 320pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 3.7A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 80mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.7V
• Rohs Compliant: Yes
• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS9952ATR

Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
DSS
GSSF
GSSR
D(on)
FS
GS(th)
DS(ON)
iss
oss
rss
DSS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
(T
A
= 25°C unless otherwise noted)
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
N-Channel
V
P-Channel
V
f = 1.0 MHz
f = 1.0 MHz
GS
GS
DS
DS
GS
GS
DS
DS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
= 24 V, V
= -24 V, V
= V
= V
= 15 V, I
= -15 V, I
= 10 V, V
= -10 V, V
= 0 V, I
= 0 V, I
= 20 V, V
= -20 V, V
= 10 V, I
= 4.5 V, I
= -10 V, I
= -4.5 V, I
= 10 V, V
= -10 V, V
GS
GS
, I
, I
D
D
D
D
= 250 µA
= -250 µA
D
D
D
GS
DS
= 250 µA
= -250 µA
DS
D
GS
GS
DS
D
DS
D
= 3.7 A
= 1.0 A
= -2.9 A
GS
= -1.0 A
= 0 V
= 0 V
= 0.5 A
= 5 V
= 0 V
= -0.5 A
= 0 V
= 0 V,
= -5 V
= 0 V,
T
T
T
T
T
T
T
T
J
J
J
J
J
J
J
J
= 55°C
= 55°C
= 125°C
= 125°C
= 125°C
= 125°C
= 125°C
= 125°C
Type
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
All
All
-0.85
Min
-30
-10
30
0.7
15
-1
1
-1.25
Typ
0.06
0.08
0.08
0.11
0.11
0.15
0.17
0.24
-1.6
320
350
225
260
100
1.7
1.2
85
6
4
0.08
Max
-100
0.13
0.11
0.18
0.13
0.21
0.32
100
-2.8
-2.5
-25
0.2
25
2.8
2.2
-2
2
NDS9952A.SAM
Units
µA
µA
µA
µA
nA
nA
V
V
A
S
V
pF
pF
pF