FDS9945 Fairchild Semiconductor, FDS9945 Datasheet - Page 3

• Manufacturer Part Number: FDS9945
• Description: MOSFET N-CH 60V 3.5A SO-8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS9945

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 5V
• Input Capacitance (ciss) @ Vds: 420pF @ 30V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 8.6 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 3.5A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS9945; FDS9945TR

Typical Characteristics
20
15
10
10
5
0
8
6
4
2
0
0
1.8
1.6
1.4
1.2
0.8
0.6
0.4
2
2
1
Figure 1. On-Region Characteristics.
V
-50
D S
Figure 5. Transfer Characteristics.
Figure 3. On-Resistance Variation
= 5V
V
I
D
GS
V
2.5
= 3.5A
GS
-25
1
= 10V
= 10V
V
V
DS
G S
withTemperature.
, DRAIN-SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
T
0
J
, JUNCTION TEMPERATURE (
3
2
6.0V
25
5.0V
3.5
50
3
4.5V
T
A
= -55
4.0V
75
4
o
C
4
100
o
C)
125
4.5
o
C
25
125
o
5
C
150
5
Figure 6. Body Diode Forward Voltage Variation
0.25
0.15
0.05
0.2
0.1
0.0001
0.001
0.01
2.2
1.8
1.6
1.4
1.2
0.8
with Source Current and Temperature.
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.1
2
10
2
1
1
0
0
Drain Current and Gate Voltage.
V
GS
V
= 0V
GS
Gate-to-Source Voltage.
= 4.0V
0.2
V
V
3
SD
4
GS
, BODY DIODE FORWARD VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
T
A
T
= 125
A
I
0.4
= 25
D
, DRAIN CURRENT (A)
4.5V
o
o
C
6
C
6
0.6
5.0V
T
A
25
= 125
o
C
9
o
C
6.0V
0.8
-55
8
o
C
12
FDS9945 Rev B(W)
I
D
1
= 1.75A
10V
1.2
15
10