FDS9945 Fairchild Semiconductor, FDS9945 Datasheet - Page 2

• Manufacturer Part Number: FDS9945
• Description: MOSFET N-CH 60V 3.5A SO-8
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS9945

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 5V
• Input Capacitance (ciss) @ Vds: 420pF @ 30V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 8.6 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 3.5A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS9945; FDS9945TR

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
DSS
GSSF
GSSR
D(on)
S
the drain pins. R
d(on)
r
d(off)
f
FS
BV
V
DS(on)
iss
oss
rss
GS(th)
g
gs
gd
SD
JA
DSS
GS(th)
T
T
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
JC
is guaranteed by design while R
a) 78°/W when
mounted on a 0.5in
pad of 2 oz copper
Parameter
(Note 2)
2
(Note 2)
CA
is determined by the user's board design.
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
T
D
D
A
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
b) 125°/W when
= 250 A, Referenced to 25 C
= 250 A, Referenced to 25 C
= 25°C unless otherwise noted
= 10 V, I
mounted on a 0.02
in
copper
= 0 V, I
= 48 V,
= 20 V,
= –20 V
= V
= 10 V,
= 4.5V,
= 10 V,
= 5V,
= 30 V,
= 30 V,
= 10 V,
= 30 V,
= 0 V, I
= 5 V
2
pad of 2 oz
Test Conditions
GS
, I
D
D
D
= 250 A
S
= 250 A
=3.5A, T
= 2.1 A
V
V
V
I
I
V
I
GS
DS
D
D
D
= V
I
I
R
DS
D
D
= 3.5 A
= 2.5 A
GS
GEN
= 3.5 A,
= 3.5 A
= 1 A,
= 0 V
= 0 V
= 0 V
DS
= 0 V,
J
= 6
=125 C
=30 V
(Note 2)
Min
60
10
1
c) 135°/W when mounted on a
minimum pad.
Typ
62.5
103
126
420
2.5
8.6
4.3
2.5
0.8
–6
74
48
20
19
7
3
8
4
Max Units
–100
100
100
200
170
8.6
2.1
1.2
14
34
13
1
3
6
FDS9945 Rev B(W)
mV/ C
mV/ C
m
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V
A