FDMA2002NZ Fairchild Semiconductor, FDMA2002NZ Datasheet - Page 4

IC MOSFET N-CH DUAL MICROFET 2X2

FDMA2002NZ

Manufacturer Part Number
FDMA2002NZ
Description
IC MOSFET N-CH DUAL MICROFET 2X2
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet

Specifications of FDMA2002NZ

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
123 mOhm @ 2.9A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.9A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
3nC @ 4.5V
Input Capacitance (ciss) @ Vds
220pF @ 15V
Power - Max
650mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.123 Ohm @ 4.5 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
2.9 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.123Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±12V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
MicroFET
Module Configuration
Dual
Continuous Drain Current Id
2.9A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
123mohm
Rds(on) Test Voltage Vgs
1V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMA2002NZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMA2002NZ
Manufacturer:
Fairchild Semiconductor
Quantity:
136 485
Part Number:
FDMA2002NZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
10
10
8
6
4
2
0
1.8
1.6
1.4
1.2
0.8
0.6
8
6
4
2
0
0.5
1
Figure 3. On-Resistance Variation with
0
-50
Figure 1. On-Region Characteristics.
V
Figure 5. Transfer Characteristics.
V
DS
3.5V
V
GS
I
GS
D
= 5V
= 4.5V
= 2.9A
-25
= 4.5V
0.5
1
V
V
GS
T
DS
0
, GATE TO SOURCE VOLTAGE (V)
2.9V
J
, JUNCTION TEMPERATURE (
, DRAIN-SOURCE VOLTAGE (V)
Temperature.
1
2.7V
25
1.5
2.5V
T
A
1.5
= -55
50
o
C
2
75
2
25
2.0V
100
o
o
C)
C
2.5
2.5
125
125
1.5V
o
C
150
3
3
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.24
0.16
0.12
0.08
0.04
0.001
0.2
0.01
100
0.1
1.8
1.6
1.4
1.2
0.8
10
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
1
with Source Current and Temperature.
1
0
0
0
T
V
Drain Current and Gate Voltage.
A
T
GS
= 25
A
= 125
= 0V
2.5V
0.2
V
o
Gate-to-Source Voltage.
C
GS
-V
o
2
C
= 2.0V
SD
V
2
GS
, BODY DIODE FORWARD VOLTAGE (V)
0.4
, GATE TO SOURCE VOLTAGE (V)
2.7V
25
I
o
D
C
, DRAIN CURRENT (A)
0.6
T
4
A
-55
4
= 125
2.9V
o
C
0.8
o
C
3.5V
6
6
1
4.0V
1.2
FDMA2002NZ Rev B (W)
8
8
I
D
1.4
= 1.45A
4.5V
1.6
10
10

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