FDMA2002NZ Fairchild Semiconductor, FDMA2002NZ Datasheet - Page 2

• Manufacturer Part Number: FDMA2002NZ
• Description: IC MOSFET N-CH DUAL MICROFET 2X2
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDMA2002NZ

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 123 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 220pF @ 15V
• Power - Max: 650mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.123 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2.9 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.123Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±12V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: MicroFET
• Module Configuration: Dual
• Continuous Drain Current Id: 2.9A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 123mohm
• Rds(on) Test Voltage Vgs: 1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA2002NZTR

Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
On Characteristics
V
R
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
DSS
GSS
S
rr
d(on)
r
d(off)
f
BV
V
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
GS(th)
DSS
T
T
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage Current
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Source–Drain Diode Forward Current
Source–Drain Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Parameter
(Note 2)
V
I
V
V
V
I
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
I
I
I
dI
T
D
D
S
S
F
A
GS
DS
GS
DS
GS
GS
GS
GS
GS
GS
DS
DD
GS
DS
GS
F
= 2.0 A
= 1.1 A
= 2.9 A,
= 250 A, Referenced to 25°C
= 250 A, Referenced to 25°C
= 25°C unless otherwise noted
/dt = 100 A/μs
= 0 V,
= 24 V,
= ± 12 V,
= V
= 4.5V, I
= 3.0V, I
= 2.5V, I
= 4.5V, I
= 3.0V, I
= 2.5V, I
= 15 V,
= 15 V,
= 4.5 V,
= 15 V,
= 4.5 V
Test Conditions
GS
,
D
D
D
D
D
D
= 2.9A
= 2.7A
= 2.5A
= 2.9A, T
= 2.7A, T
= 2.5A, T
I
I
V
I
R
I
V
V
D
D
D
D
GS
GEN
DS
GS
= 250 A
= 250 A
= 1 A,
= 2.9 A,
= 0 V
= 0 V
= 0 V,
= 6
C
C
C
= 85°C
= 150°C
= 150°C
Min Typ Max Units
0.4
30
0.35
0.75
138
150
190
1.0
2.4
0.9
0.8
25
–3
75
84
92
95
30
20
12
10
6
8
2
2
±10
123
140
163
166
203
268
220
2.9
1.5
3.0
1.2
1.2
FDMA2002NZ Rev B (W)
40
30
12
16
21
10
1
mV/°C
mV/ C
m
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
A
V
V
V
A
A