FDMA2002NZ Fairchild Semiconductor, FDMA2002NZ Datasheet - Page 2
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FDMA2002NZ
Manufacturer Part Number
FDMA2002NZ
Description
IC MOSFET N-CH DUAL MICROFET 2X2
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet
1.FDMA2002NZ.pdf
(6 pages)
Specifications of FDMA2002NZ
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
123 mOhm @ 2.9A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.9A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
3nC @ 4.5V
Input Capacitance (ciss) @ Vds
220pF @ 15V
Power - Max
650mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.123 Ohm @ 4.5 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
2.9 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.123Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±12V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
MicroFET
Module Configuration
Dual
Continuous Drain Current Id
2.9A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
123mohm
Rds(on) Test Voltage Vgs
1V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMA2002NZTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDMA2002NZ
Manufacturer:
Fairchild Semiconductor
Quantity:
136 485
Part Number:
FDMA2002NZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
On Characteristics
V
R
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
DSS
GSS
S
rr
d(on)
r
d(off)
f
BV
V
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
GS(th)
DSS
T
T
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage Current
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Source–Drain Diode Forward Current
Source–Drain Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Parameter
(Note 2)
V
I
V
V
V
I
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
I
I
I
dI
T
D
D
S
S
F
A
GS
DS
GS
DS
GS
GS
GS
GS
GS
GS
DS
DD
GS
DS
GS
F
= 2.0 A
= 1.1 A
= 2.9 A,
= 250 A, Referenced to 25°C
= 250 A, Referenced to 25°C
= 25°C unless otherwise noted
/dt = 100 A/μs
= 0 V,
= 24 V,
= ± 12 V,
= V
= 4.5V, I
= 3.0V, I
= 2.5V, I
= 4.5V, I
= 3.0V, I
= 2.5V, I
= 15 V,
= 15 V,
= 4.5 V,
= 15 V,
= 4.5 V
Test Conditions
GS
,
D
D
D
D
D
D
= 2.9A
= 2.7A
= 2.5A
= 2.9A, T
= 2.7A, T
= 2.5A, T
I
I
V
I
R
I
V
V
D
D
D
D
GS
GEN
DS
GS
= 250 A
= 250 A
= 1 A,
= 2.9 A,
= 0 V
= 0 V
= 0 V,
= 6
C
C
C
= 85°C
= 150°C
= 150°C
Min Typ Max Units
0.4
30
0.35
0.75
138
150
190
1.0
2.4
0.9
0.8
25
–3
75
84
92
95
30
20
12
10
6
8
2
2
±10
123
140
163
166
203
268
220
2.9
1.5
3.0
1.2
1.2
FDMA2002NZ Rev B (W)
40
30
12
16
21
10
1
mV/°C
mV/ C
m
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
A
V
V
V
A
A