NDC7003P Fairchild Semiconductor, NDC7003P Datasheet - Page 3

• Manufacturer Part Number: NDC7003P
• Description: MOSFET 2P-CH 60V 340MA SSOT6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of NDC7003P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 340mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 340mA
• Vgs(th) (max) @ Id: 3.5V @ 250µA
• Gate Charge (qg) @ Vgs: 2.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 66pF @ 25V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.34 A
• Power Dissipation: 960 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 5Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SuperSOT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDC7003PTR

Typical Characteristics
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
Figure 3. On-Resistance Variation with
1
0
1
0
Figure 1. On-Region Characteristics.
1
-50
0
1
Figure 5. Transfer Characteristics.
V
GS
I
V
V
D
GS
= -10V
-6.0V
DS
= -0.34A
-25
= -10V
= -5V
1
-V
-V
DS
T
2
GS
0
J
, DRAIN TO SOURCE VOLTAGE (V)
Temperature.
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
25
-4.0V
2
-4.5V
T
A
= -55
50
3
o
C
3
75
125
-3.5V
o
C
o
100
C)
25
4
o
C
4
125
-3.0V
150
5
5
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.01
0.1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
10
with Source Current and Temperature.
5
4
3
2
1
0
1
2.2
1.8
1.6
1.4
1.2
0.8
2
0.2
2
1
T
0
Drain Current and Gate Voltage.
A
V
= 25
V
GS
GS
= -3.0V
o
= 0V
Gate-to-Source Voltage.
C
-V
0.4
SD
-V
0.2
, BODY DIODE FORWARD VOLTAGE (V)
T
4
GS
A
-3.5V
, GATE TO SOURCE VOLTAGE (V)
= 125
T
A
-I
= 125
D
o
, DRAIN CURRENT (A)
C
0.6
0.4
-4.0V
o
C
25
6
o
-4.5V
C
0.8
0.6
-55
-6.0V
o
C
8
NDC7003P Rev B(W)
0.8
I
D
1
= -0.17A
-10V
1.2
1
10