NDC7003P Fairchild Semiconductor, NDC7003P Datasheet - Page 2
![MOSFET 2P-CH 60V 340MA SSOT6](/photos/5/42/54216/261-supersot-6_sml.jpg)
NDC7003P
Manufacturer Part Number
NDC7003P
Description
MOSFET 2P-CH 60V 340MA SSOT6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet
1.NDC7003P.pdf
(5 pages)
Specifications of NDC7003P
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 Ohm @ 340mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
340mA
Vgs(th) (max) @ Id
3.5V @ 250µA
Gate Charge (qg) @ Vgs
2.2nC @ 10V
Input Capacitance (ciss) @ Vds
66pF @ 25V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Dual
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
5 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.34 A
Power Dissipation
960 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
2
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
5Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SuperSOT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDC7003PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDC7003P
Manufacturer:
FSC
Quantity:
15 000
Company:
Part Number:
NDC7003P
Manufacturer:
FSC
Quantity:
12 000
Part Number:
NDC7003P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
R
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
the drain pins. R
DSS
GSS
D(on)
d(on)
r
d(off)
f
S
BV
V
FS
GS(th)
SD
DS(on)
iss
oss
rss
G
g
gs
gd
JA
GS(th)
DSS
T
T
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage,
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
JC
is guaranteed by design while R
a) 130 C/W when
mounted on a 0.125
in
copper.
2
Parameter
pad of 2 oz.
(Note 2)
(Note 2)
CA
is determined by the user's board design.
V
I
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
D
D
T
GS
DS
GS
DS
GS
GS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
= –250 A, Referenced to 25 C
= –250 A, Referenced to 25 C
A
b) 140°C/W when mounted
= –10 V,I
= 25°C unless otherwise noted
= 15mV,
= –48 V,
= V
= –10 V,
= –25 V,
= –25 V,
= –25 V,
= 0 V,
= 20 V,
= –10 V,
= –4.5 V,
= –10 V
= –10 V,
= –10 V
= 0 V,
on a .005 in
copper
GS
, I
Test Conditions
D
D
= –250 A
= –0.34 A, T
2
I
V
V
pad of 2 oz
D
I
I
V
I
V
f = 1.0 MHz
I
I
GS
DS
D
D
D
I
R
D
S
= –250 A
D
DS
GS
= –0.34 A
= –0.34 A
= –0.25 A
= –0.34 A
GEN
= –0.34 A,
= 0 V
= 0 V
= –1 A,
= –10 V
= 0 V,
= 6
J
=125 C
(Note 2)
Min
–60
–1
–1
c) 180°C/W when mounted on a
minimum pad.
–1.9
11.2
–0.8
Typ
–57
700
3.2
1.6
3.2
1.2
1.5
1.9
0.3
0.3
10
66
13
6
8
1
–
Max
–3.5
–1.4
7.5
6.4
2.2
0.34
–1
100
10
20
16
5
2
NDC7003P Rev B(W)
mV/ C
mV/ C
Units
mS
nA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
A
A
V
A