NDC7003P Fairchild Semiconductor, NDC7003P Datasheet - Page 2

• Manufacturer Part Number: NDC7003P
• Description: MOSFET 2P-CH 60V 340MA SSOT6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of NDC7003P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 340mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 340mA
• Vgs(th) (max) @ Id: 3.5V @ 250µA
• Gate Charge (qg) @ Vgs: 2.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 66pF @ 25V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.34 A
• Power Dissipation: 960 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 5Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SuperSOT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDC7003PTR

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
R
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
the drain pins. R
DSS
GSS
D(on)
d(on)
r
d(off)
f
S
BV
V
FS
GS(th)
SD
DS(on)
iss
oss
rss
G
g
gs
gd
JA
GS(th)
DSS
T
T
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage,
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
JC
is guaranteed by design while R
a) 130 C/W when
mounted on a 0.125
in
copper.
2
Parameter
pad of 2 oz.
(Note 2)
(Note 2)
CA
is determined by the user's board design.
V
I
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
D
D
T
GS
DS
GS
DS
GS
GS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
= –250 A, Referenced to 25 C
= –250 A, Referenced to 25 C
A
b) 140°C/W when mounted
= –10 V,I
= 25°C unless otherwise noted
= 15mV,
= –48 V,
= V
= –10 V,
= –25 V,
= –25 V,
= –25 V,
= 0 V,
= 20 V,
= –10 V,
= –4.5 V,
= –10 V
= –10 V,
= –10 V
= 0 V,
on a .005 in
copper
GS
, I
Test Conditions
D
D
= –250 A
= –0.34 A, T
2
I
V
V
pad of 2 oz
D
I
I
V
I
V
f = 1.0 MHz
I
I
GS
DS
D
D
D
I
R
D
S
= –250 A
D
DS
GS
= –0.34 A
= –0.34 A
= –0.25 A
= –0.34 A
GEN
= –0.34 A,
= 0 V
= 0 V
= –1 A,
= –10 V
= 0 V,
= 6
J
=125 C
(Note 2)
Min
–60
–1
–1
c) 180°C/W when mounted on a
minimum pad.
–1.9
11.2
–0.8
Typ
–57
700
3.2
1.6
3.2
1.2
1.5
1.9
0.3
0.3
10
66
13
6
8
1
–
Max
–3.5
–1.4
7.5
6.4
2.2
0.34
–1
100
10
20
16
5
2
NDC7003P Rev B(W)
mV/ C
mV/ C
Units
mS
nA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
A
A
V
A