FGPF30N45TTU Fairchild Semiconductor, FGPF30N45TTU Datasheet - Page 4

• Manufacturer Part Number: FGPF30N45TTU
• Description: IGBT PDP 450V 30A TO-220F
• Manufacturer: Fairchild Semiconductor

Specifications of FGPF30N45TTU

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce(on) (max) @ Vge, Ic: 1.6V @ 15V, 20A
• Power - Max: 50.4W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector (ic) (max): -

FGPF30N45T Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Gate charge Characteristics
Figure 11. Turn-on Characteristics vs.
100
15
12
500
20
16
12
9
6
3
0
10
8
4
0
1
0
0
0
Common Emitter
T
C
= 25
Gate Resistance
I
C
o
= 10A
C
t
4
10
r
Gate-Emitter Voltage, V
20
t
d(on)
Gate Resistance, R
Gate Charge, Q
8
20
V
CC
20A
40
= 100V
30A
Common Emitter
V
I
T
T
C
12
C
C
CC
30
g
= 30A
= 25
= 125
[nC]
= 200V, V
Common Emitter
T
G
C
GE
o
= 125
[ Ω ]
C
o
60
200V
C
[V]
16
GE
40
o
GE
C
= 15V
80
20
50
4
Figure 8. Capacitance Characteristics
10000
Figure 10. SOA Characteristics
1000
1000
Figure 12. Turn-off Characteristics vs.
0.01
100
500
100
100
0.1
10
10
10
1
1
1
0
I
I
C
C
Common Emitter
V
T
Single Nonrepetitive
Pulse T C = 25 o C
Curves must be derated
linearly with increase
in temperature
GE
C
MAX (Pulse)
MAX (Continuous)
= 25
= 0V, f = 1MHz
Collector-Emitter Voltage, V
Gate Resistance
Collector-Emitter Voltage, V
o
C
10
Gate Resistance, R
C
C
C
10
res
oes
ies
20
DC Operation
Common Emitter
V
I
T
T
t
C
f
30
CC
C
C
= 30A
= 25
= 125
100
G
= 200V, V
10
[
Ω
CE
o
C
]
o
10 ms
CE
t
C
1ms
d(off)
[V]
100
40
[V]
µ
GE
s
10
= 15V
www.fairchildsemi.com
µ
s
1000
30
50